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Title:
ANTI-CHARGING LAYER FOR BEAM LITHOGRAPHY AND MASK FABRICATION
Document Type and Number:
WIPO Patent Application WO2002095787
Kind Code:
A3
Abstract:
This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-ssembled monolayers (SAMs) as discharge layers.

Inventors:
DOBISZ ELIZABETH
DRESSICK WALTER J
BRANDOW SUSAN L
CHEN MU-SAN
Application Number:
PCT/US2002/003885
Publication Date:
February 13, 2003
Filing Date:
February 08, 2002
Export Citation:
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Assignee:
US NAVY NAVAL RES LAB (US)
International Classes:
G03C5/04; G03F7/09; G03F7/16; G03C7/04; (IPC1-7): G03F7/16; G03F7/00
Foreign References:
US5510216A1996-04-23
US6114099A2000-09-05
US5885753A1999-03-23
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