Title:
ANTI-FUSE MEMORY ARRAY CIRCUIT AND OPERATION METHOD THEREFOR, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/173608
Kind Code:
A1
Abstract:
An anti-fuse memory array circuit and an operation method therefor, and a memory. The anti-fuse memory array circuit comprises: at least one anti-fuse memory array (10), the anti-fuse memory array comprising multiple anti-fuse memory cells; and a programming control module (20) that is connected to the at least one anti-fuse memory array (10) and configured to provide a fixed programming current when the anti-fuse memory cells are programmed.
Inventors:
JI RUMIN (CN)
Application Number:
PCT/CN2022/098713
Publication Date:
September 21, 2023
Filing Date:
June 14, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C11/401
Foreign References:
| CN112582013A | 2021-03-30 | |||
| CN107293328A | 2017-10-24 | |||
| CN113948141A | 2022-01-18 | |||
| US5353028A | 1994-10-04 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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