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Title:
ANTIELECTROSTATIC ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/042502
Kind Code:
A1
Abstract:
[Problem] To provide an antielectrostatic element which has low capacitance and not only an excellent discharging property, but decreased variation in the discharging property. [Solution] A so-called gap type antielectrostatic element has an antielectrostatic material filled between a pair of opposing electrodes. A discharge inducing section has projections at the insulating substrate sides from the boundary facings between the opposing electrodes and insulating substrates and therefore has a shape projecting to the insulating substrates at both sides. The relationship between the distance of the gap between the electrodes, the thickness of the opposing electrodes, and the projections of the discharge inducing section is controlled under a specific condition.

Inventors:
SUZUKI SHINGO (JP)
NAKAMURA JUNICHI (JP)
ASAKURA KENSAKU (JP)
FUJIMORI TAKAHIRO (JP)
Application Number:
PCT/JP2012/071024
Publication Date:
March 28, 2013
Filing Date:
August 21, 2012
Export Citation:
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Assignee:
TDK CORP (JP)
SUZUKI SHINGO (JP)
NAKAMURA JUNICHI (JP)
ASAKURA KENSAKU (JP)
FUJIMORI TAKAHIRO (JP)
International Classes:
H01T4/10; H01T1/20
Domestic Patent References:
WO2011040435A12011-04-07
Foreign References:
JP2000077162A2000-03-14
JP2009009944A2009-01-15
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