Title:
APPARATUS FOR CHARGING THIN FILM CAPACITOR
Document Type and Number:
WIPO Patent Application WO/2012/001810
Kind Code:
A1
Abstract:
Disclosed is an apparatus for charging thin film capacitors, wherein an excess current generated at the time of charging the thin film capacitors is eliminated with a low-cost configuration. The apparatus has: a direct current power supply (DC) which supplies direct currents to a plurality of thin film capacitors; resistors, which are connected in series to the thin film capacitors, respectively, and which limit the current value of the direct currents to be supplied to the thin film capacitors from the direct current power supply (DC); and series-parallel system changeover switches (SW), each of which is connected in series to each thin film capacitor (C), performs switching to series connection by short-circuiting both the ends of each thin film capacitor when one contact is selected, and performs switching to parallel connection when the other contact is selected, and supplies a direct current to each thin film capacitor by supplying a direct current to the resistor. At the time of charging each thin film capacitor (C), a current to be supplied to the thin film capacitor is suppressed by resistance by means of parallel connection, and at the time of discharging electricity from the thin film capacitor, electricity is permitted to be discharged by series connection, irrespective of the resistors, by switching a charging operation switch (SW1) and a discharge operation switch (SW2).
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Inventors:
SHIMIZU, Kanji (11-1, Imadera Nishi-ku, Kobe-sh, Hyogo 14, 〒6512114, JP)
Application Number:
JP2010/061287
Publication Date:
January 05, 2012
Filing Date:
July 01, 2010
Export Citation:
Assignee:
SHIMIZU, Kanji (11-1, Imadera Nishi-ku, Kobe-sh, Hyogo 14, 〒6512114, JP)
清水 幹治 (〒14 兵庫県神戸市西区今寺１１－１ Hyogo, 〒6512114, JP)
JAPAN SILICON ELECTRONICS TECHNOLOGY INC. (5-18-8, Jingumae Shibuya-k, Tokyo 01, 〒1050001, JP)
日本シリコン・エレクトロニクス・テクノロジー株式会社 (〒01 東京都渋谷区神宮前５－１８－８ Tokyo, 〒1050001, JP)
清水 幹治 (〒14 兵庫県神戸市西区今寺１１－１ Hyogo, 〒6512114, JP)
JAPAN SILICON ELECTRONICS TECHNOLOGY INC. (5-18-8, Jingumae Shibuya-k, Tokyo 01, 〒1050001, JP)
日本シリコン・エレクトロニクス・テクノロジー株式会社 (〒01 東京都渋谷区神宮前５－１８－８ Tokyo, 〒1050001, JP)
International Classes:
H02J7/00
Attorney, Agent or Firm:
NISHI, Yoshihisa (NISHI INTERNATIONAL PATENT OFFICE, 8th floor Omura Bldg., 5-6, Shimbashi 2-chom, Minato-ku Tokyo 04, 〒1050004, JP)
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Claims: