APPARATUS FOR IMPROVING PLASMA DISTRIBUTION AND PERFORMANCE IN AN INDUCTIVELY COUPLED PLASMA

WIPO Patent Application WO2000058995

A3

A processing system (12) for processing a substrate (18) with a plasma (28) comprises a processing chamber (13) defining a processing space (14) and including a substrate support (17) therein for supporting a substrate (18) in the processing space (14) and a gas inlet (20) for introducing a process gas into said processing space (14). A plasma source is operable for creating a plasma (28) in the processing space (14) from process gas introduced therein. The plasma source comprises a dielectric window (24a) which interfaces with the processing chamber (12) proximate the processing space (14) and an inductive element (10) positioned outside of the chamber (12) and proximate the dielectric window (24a). The inductive element (10) is operable for coupling electrical energy through the dielectric window (24a) and into the processing space (14) to create a plasma (28) therein and comprises a variety of alternative designs for providing a dense, uniform plasma.

BRCKA JOZEF
CONSOLI PAUL LOUIS

PCT/US2000/007902

January 25, 2001

March 23, 2000

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TOKYO ELECTRON LTD (JP)
TOKYO ELECTRON ARIZONA INC (US)

H05H1/46; B01J19/08; C23C14/34; C23C16/507; H01J37/32; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H01J37/32

WO2000036632A2

2000-06-22

US5648701A	1997-07-15
EP0553704A1	1993-08-04
EP0813227A2	1997-12-17
US5368710A	1994-11-29
EP0840350A2	1998-05-06
US5650032A	1997-07-22
EP0838843A2	1998-04-29
US5800619A	1998-09-01
EP0756309A1	1997-01-29
EP0820086A1	1998-01-21
US5122251A	1992-06-16

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