APPARATUS FOR MANUFACTURING SIC EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

WIPO Patent Application WO/2022/163052

A1

A device (2) for manufacturing a SiC epitaxial wafer according to the present disclosure is provided with: a growth furnace (100A); a gas mixing preliminary chamber (107) which is disposed outside the growth furnace (100A) and which mixes a carrier gas and/or a material gas and regulates the pressure thereof; a wafer boat (210) in which a plurality of SiC wafer pairs (200WP), in which two substrates having SiC single crystals are brought into contact with each other in a back-to-back manner, are disposed at equal intervals with a gap therebetween; and a heating part (101) which heats the wafer boat (210) installed in the growth furnace (100A) to an epitaxial growth temperature. The carrier gas and/or material gas are mixed and pressure-regulated in advance in the gas mixing preliminary chamber (107), and then introduced into the growth furnace (100A), whereby a SiC layer is grown on the surface of each of the plurality of SiC wafer pairs (200WP). Provided is an apparatus for manufacturing a SiC epitaxial wafer having high quality and capable of reducing costs.

TAKAMURA MAKOTO (JP)
MAEKAWA TAKUJI (JP)
MORIMOTO MITSURU (JP)
MASAGO NORIYUKI (JP)
OKA TAKAYASU (JP)

PCT/JP2021/040770

August 04, 2022

November 05, 2021

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ROHM CO LTD (JP)

C30B29/36; C23C16/42; C30B25/12; C30B25/20; H01L21/20; H01L21/205; H01L21/329; H01L21/336; H01L29/12; H01L29/78; H01L29/872

JP2015230998A	2015-12-21
JP2017059670A	2017-03-23
JPH0620961A	1994-01-28
JPH06314660A	1994-11-08
JP2012517526A	2012-08-02
JPS62173712A	1987-07-30
JP2013124215A	2013-06-24

MIYOSHI Hidekazu et al. (JP)

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