Title:
APPARATUS AND METHOD FOR FORMATION OF LOW-TEMPERATURE POLYSILICON FILM
Document Type and Number:
WIPO Patent Application WO/2011/055618
Kind Code:
A1
Abstract:
Disclosed is a formation apparatus and a formation method, which enable the production of a low-temperature polysilicon film that does not undergo the fluctuation in crystal grain size and has a uniform crystal grain size. A mask is so formed that a laser-beam-blocking area and a laser-beam-transmissive area are arranged in a reticular pattern so as not to be adjacent to each other. A predetermined channel-area-forming area is irradiated with a laser beam by means of a microlens through the mask. An a-Si:H film is irradiated with the laser beam that has been transmitted through the transmissive area to cause the annealing of the irradiated part, thereby causing polycrystallization. Subsequently, the mask is removed, and the entire surface of the predetermined channel-area-forming area is irradiated with the laser beam. In an area in which the polycrystallization has occurred already, the melting point is raised and melting does not occur. In an area which is still amorphous is melted and solidified, thereby causing polycrystallization. In the polysilicon film thus produced, the sizes of crystal grains are controlled in accordance with a light-blocking area and a light-transmissive area and fall within a specific range.
Inventors:
KAJIYAMA KOICHI (JP)
HAMANO KUNIYUKI (JP)
MIZUMURA MICHINOBU (JP)
HAMANO KUNIYUKI (JP)
MIZUMURA MICHINOBU (JP)
Application Number:
PCT/JP2010/068005
Publication Date:
May 12, 2011
Filing Date:
October 14, 2010
Export Citation:
Assignee:
V TECHNOLOGY CO LTD (JP)
KAJIYAMA KOICHI (JP)
HAMANO KUNIYUKI (JP)
MIZUMURA MICHINOBU (JP)
KAJIYAMA KOICHI (JP)
HAMANO KUNIYUKI (JP)
MIZUMURA MICHINOBU (JP)
International Classes:
H01L21/268; H01L21/20; H01L21/336; H01L29/786
Foreign References:
| JP2008521247A | 2008-06-19 | |||
| JP2008131024A | 2008-06-05 | |||
| JP2007043127A | 2007-02-15 | |||
| JP2006511064A | 2006-03-30 | |||
| JP2006287129A | 2006-10-19 | |||
| JP2003109911A | 2003-04-11 | |||
| JP2003203874A | 2003-07-18 |
Attorney, Agent or Firm:
FUJIMAKI, MASANORI (JP)
Masanori Fujimaki (JP)
Masanori Fujimaki (JP)
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