Title:
APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTALS
Document Type and Number:
WIPO Patent Application WO/2014/137072
Kind Code:
A1
Abstract:
The present invention relates to an apparatus and a method for growing high-quality silicon carbide single crystals by coating the inner wall of the existing graphite crucible with tungsten (W). In accordance with the present invention, high-quality silicon carbide single crystals can be grown by coating the inner wall of the existing graphite crucible with tungsten (W).
Inventors:
KIM JUNG GYU (KR)
PARK JONG HWI (KR)
KU KAP RYEOL (KR)
KYUN MYUNG OK (KR)
CHOI JUNG WOO (KR)
PARK JONG HWI (KR)
KU KAP RYEOL (KR)
KYUN MYUNG OK (KR)
CHOI JUNG WOO (KR)
Application Number:
PCT/KR2014/000587
Publication Date:
September 12, 2014
Filing Date:
January 21, 2014
Export Citation:
Assignee:
SKC CO LTD (KR)
International Classes:
C30B15/10; C30B29/06
Foreign References:
| KR20130014272A | 2013-02-07 | |||
| KR20020042682A | 2002-06-05 | |||
| US20020096108A1 | 2002-07-25 | |||
| KR20010101977A | 2001-11-15 | |||
| KR20060115891A | 2006-11-10 |
Attorney, Agent or Firm:
HALLA PATENT & LAW FIRM (262 Gangnam-daero,Gangnam-gu, Seoul 135-739, KR)
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