APPARATUS AND METHOD FOR IMPROVING ELECTRICAL CONDUCTION STRUCTURE OF A VERTICAL CAVITY SURFACE EMITTING LASER

Title:

APPARATUS AND METHOD FOR IMPROVING ELECTRICAL CONDUCTION STRUCTURE OF A VERTICAL CAVITY SURFACE EMITTING LASER

Document Type and Number:

WIPO Patent Application WO2003085788

Kind Code:

A3

Abstract:

A heavily doped semiconductor layer (280) is formed over the barrel of a vertical cavity surface emitting laser (VCSEL) (200), providing current conduction and current spreading across and into the aperture of a laser barrel, while eliminating the need for a light-obstructing conductive electrical contact overhang. The VCSEL (200) comprises a substrate (220), a first distributed Bragg reflector (DBR) (230), an active region (240), a second DBR (250) having a non-conductive ion implantation region (255) and a laser barrel region with a first diameter (260), the heavily doped semiconductor layer (280), and a conductive electrical contact (215). The conductive electrical contact defines an opening with a second diameter (265) that is greater than the first diameter (260).

Inventors:

ZHANG XIAOBO (US)

Application Number:

PCT/US2003/009915

Publication Date:

December 04, 2003

Filing Date:

April 01, 2003

Export Citation:

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Assignee:

AXT INC (US)
ZHANG XIAOBO (US)

International Classes:

H01S5/183; H01S5/042; (IPC1-7): H01S3/08

Foreign References:

US6483127B2	2002-11-19
US6459719B1	2002-10-01

Other References: