CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority under 35 U.S.C. § 1 19 of U.S. Provisional Application Serial No. 62/081,900 filed on November 19, 2014, the content of which is relied upon and incorporated herein by reference in its entirety.

TECHNICAL FIELD

[0002] The present disclosure relates generally to methods and apparatus for processing including peeling and, more particularly, to methods and apparatus for processing including the step of peeling a leading peripheral edge of a carrier substrate from a first substrate comprising a glass substrate and/or a silicon wafer.

BACKGROUND

[0003] There is interest in using thin, flexible glass in the fabrication of flexible electronics or other devices. Flexible glass can have several beneficial properties related to either the fabrication or performance of electronic devices, for example, liquid crystal displays (LCDs), electrophoretic displays (EPD), organic light emitting diode displays (OLEDs), plasma display panels (PDPs), touch sensors, photovoltaics, etc. One component in the use of flexible glass is the ability to handle the glass in a sheet format and not in a roll format.

[0004] To enable the handling of flexible glass during processing of the flexible glass, the flexible glass is typically bonded to a relatively rigid carrier substrate using a polymer binding agent. Once bonded to the carrier substrate, the relatively rigid characteristics and size of the carrier substrate allow the bonded structure to be handled in production without undesired bending or causing damage to the flexible glass. For example, thin-film transistor (TFT) components may be attached to the flexible glass in the production of LCDs.

[0005] After processing, the flexible glass is removed from the carrier substrate. However, given the delicate nature of the flexible glass, the force applied to detach the flexible glass from the carrier substrate can damage the flexible glass. Moreover, the separation process, which typically includes the insertion of an implement to the flexible glass-carrier interface, can often damage the carrier substrate as well, rendering the carrier substrate unusable for future use. Accordingly, there is a need for practical solutions for detaching thin, flexible glass from a carrier substrate, that reduce the potential for damaging the flexible glass and/or carrier substrate. SUMMARY

[0006] The following presents a simplified summary of the disclosure in order to provide a basic understanding of some example aspects described in the detailed description.

[0007] In a first aspect, a method is provided for processing a first substrate with a first major surface of the first substrate removably bonded to a first major surface of a carrier substrate. The method includes the step (I) of peeling the leading peripheral edge of the carrier substrate from the first substrate by applying pressure to a leading peripheral surface portion of a second major surface of the carrier substrate. The method further includes the step (II) of continuing to peel the carrier substrate from the first substrate until the carrier substrate is completely removed from the first substrate. The method further includes the step (ΠΙ) of controlling a bend radius of the carrier substrate during step (II).

[0008] In one example of the first aspect, a shape of the first substrate is fixed during step (I) and step (II). In a particular example, the method further comprises vacuum attaching the first substrate to a vacuum plate, wherein the vacuum attachment provides the shape of the first substrate that is fixed during step (I) and step (II).

[0009] In another example of the first aspect, the first substrate comprises a substrate selected from the group consisting of: a glass substrate and a silicon wafer.

[0010] In still another example of the first aspect, the first substrate includes a thickness of from about 100 microns to about 300 microns.

[0011] In yet another example of the first aspect, the carrier substrate includes a thickness of from about 300 microns to about 700 microns.

[0012] In a further example of the first aspect, a footprint of the carrier substrate is larger than a footprint of the first substrate.

[0013] In still a further example of the first aspect, prior to step (I), the method further comprises the step of processing the first substrate while the first substrate is bonded to the carrier substrate.

[0014] In yet a further example of the first aspect, the leading peripheral surface portion of the second major surface of the carrier substrate includes a length defined between a first lateral edge and a second lateral edge of the carrier substrate. Furthermore, step (I) applies pressure along substantially the entire length of the leading peripheral surface portion of the second major surface of the carrier substrate. In one particular example, step (I) includes uniformly applying the pressure along substantially the entire length of the leading peripheral surface portion. In another particular example, step (I) includes peeling the leading peripheral edge of the carrier substrate from the first substrate substantially simultaneously along the entire length of the leading peripheral surface portion.

[0015] In another example of the first aspect, the method further comprises the step of determining a bond strength between the carrier substrate and the first substrate based on information obtained during step (I).

[0016] In still another example of the first aspect, step (I) includes vacuum attaching an attachment member to the leading peripheral surface portion of the second major surface of the carrier substrate and then applying the pressure to the leading peripheral surface portion with the attachment member.

[0017] In yet another example of the first aspect, prior to step (I), the method further includes the step of reducing a bond strength between the carrier substrate and the first substrate.

[0018] The first aspect may be provided alone or in combination with any one or more of the examples of the first aspect discussed above.

[0019] In a second aspect, a method is provided for processing a first substrate with a first major surface of the first substrate removably bonded to a first major surface of a carrier substrate. The method includes the step (I) of extending an arm over the carrier substrate, wherein an attachment member is carried by the arm. The method further includes the step (II) of vacuum attaching the attachment member to the leading peripheral surface portion of the second major surface of the carrier substrate, and the step (III) of applying pressure to the leading peripheral surface portion with the attachment member. The method further includes the step (IV) of peeling the leading peripheral edge of the carrier substrate from the first substrate with the attachment member while the attachment member pivots relative to the arm.

[0020] In one example of the second aspect, the attachment member pivots relative to the arm by an angle within the range of greater than 0° to about 15°.

[0021] In another example of the second aspect, the method includes the step of continuing to peel the carrier substrate from the first substrate while the arm pivots relative to the first substrate. In one particular example, the method can include the step of controlling a bend radius of the carrier substrate while the arm pivots relative to the first substrate.

[0022] In yet another example of the second aspect, shape of the first substrate is fixed during the step (III) and step (IV). In one example, the method includes vacuum attaching the first substrate to a vacuum plate, wherein the vacuum attachment provides the shape of the first substrate that is fixed during step (III) and step (IV).

[0023] In a further example of the second aspect, the first substrate comprises a substrate selected from the group consisting of: a glass substrate and a silicon wafer.

[0024] In yet a further example of the second aspect, the first substrate includes a thickness of from about 100 microns to about 300 microns.

[0025] In another example of the second aspect, the carrier substrate includes a thickness of from about 300 microns to about 700 microns.

[0026] In still another example of the second aspect, a footprint of the carrier substrate is larger than a footprint of the first substrate.

[0027] In still another example of the second aspect, prior to step (I), further comprising the step of processing the first substrate while the first substrate is bonded to the carrier substrate.

[0028] In a further example of the second aspect, the leading peripheral surface portion of the second major surface of the carrier substrate includes a length defined between a first lateral edge and a second lateral edge of the carrier substrate. The method further includes the step (III) of applying pressure along substantially the entire length of the leading peripheral surface portion of the second major surface of the carrier substrate. In one particular example, step (III) includes uniformly applying the pressure along substantially the entire length of the leading peripheral surface portion. In another example, step (I) includes peeling the leading peripheral edge of the carrier substrate from the first substrate substantially simultaneously along the entire length of the leading peripheral surface portion.

[0029] In another example of the second aspect, the method further comprises the step of determining a bond strength between the carrier substrate and the first substrate based on information obtained during step (I).

[0030] In still another example of the second aspect, prior to step (IV), the method further includes the step of reducing a bond strength between the carrier substrate and the first substrate.

[0031] The second aspect may be provided alone or in combination with any one or more of the examples of the second aspect discussed above.

[0032] In a third aspect, a peeling apparatus is configured to peel a first substrate from a second substrate. The peeling apparatus includes a vacuum plate, a vacuum attachment member, and an arm supporting the vacuum attachment member and pivotally attached relative to the vacuum plate. The arm is configured to extend across the vacuum plate, and the vacuum attachment member is configured to be moved away from the vacuum plate while the arm pivots relative to the vacuum plate.

[0033] In one example of the second aspect, vacuum attachment member is configured to pivot relative to the arm. In one particular example, the vacuum attachment member is confined to pivot a maximum angle relative to the arm within a range of greater than 0° to about 15°.

[0034] In another example of the third aspect, the vacuum plate is configured to translate while the vacuum attachment member moves away from the vacuum plate.

[0035] In yet another example of the second aspect, the peeling apparatus further comprises a hinge pivotally attaching the arm relative to the vacuum plate.

[0036] In another example of the third aspect, the hinge comprises a float hinge.

[0037] The third aspect may be provided alone or in combination with any one or more of the examples of the third aspect discussed above.

BRIEF DESCRIPTION OF THE DRAWINGS

[0038] These and other aspects are better understood when the following detailed description is read with reference to the accompanying drawings, in which:

[0039] FIG. 1 is a schematic side view of an example peeling apparatus;

[0040] FIG. 2 is a front view of the peeling apparatus along line 2-2 of FIG. 1;

[0041] FIG. 3 is a top view of a vacuum plate of the peeling apparatus along line 3-3 of FIG. 2;

[0042] FIG. 4 is a bottom view of a vacuum attachment member and an arm of the peeling apparatus along line 4-4 of FIG. 2;

[0043] FIG. 5 is a schematic side view of the peeling apparatus of FIG. 1 in an open orientation;

[0044] FIG. 6 is a schematic side view of the peeling apparatus of FIG. 1 in an open orientation with a second carrier substrate vacuum attached to the vacuum plate;

[0045] FIG. 7 is a schematic side view of the peeling apparatus of FIG. 1 in a closed orientation with the second carrier substrate vacuum attached to the vacuum plate and the attachment member vacuum attached to a leading peripheral surface portion of a second major surface of a first carrier substrate; [0046] FIG. 8 schematically illustrates uniformly applying pressure along substantially the entire length of the leading peripheral surface portion of the second major surface of the first carrier substrate;

[0047] FIG. 9 is an enlarged partial cross section of the peeling apparatus along line 9-9 of FIG. 8;

[0048] FIG. 10 is a partial view of FIG. 9 illustrating the step of peeling the leading peripheral edge of the first carrier substrate from the second carrier substrate and a first substrate by applying pressure to the leading peripheral surface portion of the second major surface of the first carrier substrate;

[0049] FIG. 11 illustrates a step of controlling a bend radius of the first carrier substrate while peeling the first carrier substrate from the second carrier substrate and the first substrate;

[0050] FIG. 12 illustrates the first carrier substrate being completely peeled from the second carrier substrate and the first substrate;

[0051] FIG. 13 is a schematic side view of the peeling apparatus of FIG. 1 in an open orientation with the first substrate vacuum attached to the vacuum plate;

[0052] FIG. 14 is a schematic side view of the peeling apparatus of FIG. 1 in a closed orientation with the first substrate vacuum attached to the vacuum plate and the attachment member vacuum attached to a leading peripheral surface portion of the second major surface of the second carrier substrate;

[0053] FIG. 15 illustrates a step of controlling a bend radius of the second carrier substrate while peeling the second carrier substrate from the first substrate; and

[0054] FIG. 16 illustrates example steps in methods of processing a first substrate with a first major surface of the first substrate removably bonded to a first major surface of at least one carrier substrate.

DETAILED DESCRIPTION

[0055] Examples will now be described more fully hereinafter with reference to the accompanying drawings in which example embodiments are shown. Whenever possible, the same reference numerals are used throughout the drawings to refer to the same or like parts. However, aspects may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

[0056] Peeling apparatus of the disclosure can be used to facilitate removal of a carrier substrate from a first substrate bonded to the carrier substrate. In one example, the peeling apparatus can facilitate initial or complete separation of a carrier substrate from a silicon wafer or a glass substrate. For instance, the peeling apparatus can be useful in initially or completely peeling a carrier substrate from a glass substrate or a silicon wafer. In some examples, the first substrate (e.g., glass substrate, silicon wafer, or a sandwich of glass substrates or silicon wafers) includes major surfaces that are removably bonded to respective first surfaces of a pair of carrier substrates with the first substrate sandwiched between the pair of carrier substrates. In such examples, the peeling apparatus can be useful in initially or completely peeling a first carrier substrate from the first substrate and the second carrier substrate. Moreover, after removing the first carrier substrate, the peeling apparatus can be useful in initially or completely peeling the second carrier substrate from the first substrate.

[0057] Flexible glass sheets are often used to manufacture liquid crystal displays (LCDs), electrophoretic displays (EPD), organic light emitting diode displays (OLEDs), plasma display panels (PDPs), touch sensors, photovoltaics, etc. To enable the handling of flexible glass sheet during processing, the flexible glass sheet may be bonded to a rigid carrier substrate using a binding agent, for example a polymer binding agent. The carrier substrate may be fabricated from glass, resin or other materials capable of withstanding conditions during processing of the first substrate (e.g., glass substrate, silicon wafer, etc.) removably bonded to the carrier substrate. In some examples, the carrier substrate and the substrate bonded to the carrier substrate can each include a thickness defined between the respective major surfaces of the substrates. The carrier substrate can optionally introduce a desired level of rigidity by providing the carrier substrate with a thickness that is greater than the thickness of the substrate removably bonded to the carrier substrate. Furthermore, in some examples, the carrier substrate can be selected with a thickness wherein the overall thickness of the carrier substrate and the substrate bonded to the carrier substrate is within a range that can be used with existing processing machinery configured to process relatively thick glass substrates having a thickness within the range of the overall thickness of the carrier substrate and the substrate bonded to the carrier substrate.

[0058] In some examples, the first substrate can comprise a glass substrate or a silicon wafer with a thickness of from about 100 microns to about 300 microns. In further examples, the carrier substrate (e.g., the first carrier substrate and the second carrier substrate discussed below) can include a thickness of from about 300 microns to about 700 microns. In such examples, the carrier substrate may include a thickness that is greater than the thickness of the first substrate (e.g., glass substrate or silicon wafer) bonded to the carrier substrate. [0059] The rigid characteristics and size of the carrier substrate allow the bonded glass sheet to be handled in production without significant bending that may otherwise cause damage to the flexible glass sheet and/or components mounted to the flexible glass sheet. After processing (e.g., handling, adding components, treating, etc.), a peeling apparatus of the disclosure may be used to initially or completely peel the carrier substrate from the bonded first substrate (e.g., glass substrate or silicon wafer).

[0060] Turning to FIGS. 1 & 2, there is shown an example peeling apparatus 101 configured to peel the carrier substrate from a first substrate. Throughout the disclosure, the first substrate can comprise a silicon wafer, glass substrate (e.g., a thin, flexible glass substrate). The peeling apparatus 101 further includes a vacuum plate 103 configured to releasably secure one of the substrates in place. For example, the vacuum plate can be vacuum attached to a major surface of a carrier substrate to releasably secure the carrier substrate in place. The vacuum plate 103 includes a length "LI" (see FIG. 1) and a width "Wl" (see FIG. 2). In the illustrated example, the length "LI" is greater than the width "Wl" although the length and width may be substantially equal or the width may be greater than the length in further examples.

[0061] As shown in FIG. 3, the vacuum plate 103 can include one or more vacuum ports, such as the illustrated plurality of vacuum ports 301 open at a surface 303 (e.g., a substantially planar surface). The plurality of vacuum ports 301 may be in fluid communication with a vacuum source 104 such as vacuum tank, vacuum pump, etc. As shown in FIGS. 1 and 9, a vacuum conduit 901, such as a flexible hose, may provide fluid communication between the plurality of vacuum ports 301 and the vacuum source 104. In one example, as shown in FIG. 9, a vacuum chamber 903 may be placed in fluid communication with the plurality of vacuum ports 301 such that the plurality of vacuum ports 301 are in fluid communication with the vacuum conduit 901.

[0062] Although not shown, one or more standoffs may be provided to prevent actual engagement between the major surface of the substrate and the surface 303 of the vacuum plate 103. Such standoffs may comprise a peripheral standoff, such as a ring circumscribing the plurality of vacuum ports 301. In addition or alternatively, the standoffs can comprise pillars distributed between vacuum ports throughout the pattern of vacuum ports 301. The pillars can comprise various materials such as a polymeric material. The standoffs can extend a distance of about 1.6 mm (e.g., 1/16 of an inch) although other distances may be used in further examples. [0063] Referring to FIG. 1, the vacuum plate 103 can optionally be configured to translate along a translation axis 105 in one of a first direction 107a and a second direction 107b opposite the first direction. For instance, as schematically illustrated, a plurality of bearings 109 may receive a translation rail 111 extending along the translation axis 105. In some examples, the vacuum plate 103 may freely translate in one of the directions 107a, 107b as the bearings glide along the translation rail 111. Optionally, a locking member, such as the illustrated set screw 113, may selectively lock the vacuum plate 103 relative to the translation rail 111. In a locked orientation, the vacuum plate 103 may be prevented from moving relative to the translation rail 111. Alternatively, in the unlocked orientation, the vacuum plate 103 may be able to translate relative to the translation rail 111 along one of the directions 107a, 107b. The vacuum plate 103 may be selectively locked or unlocked to accommodate different peeling procedures. In applications where only locked orientations are contemplated, the translation mechanism may be discarded altogether. In such examples, the vacuum plate 103 may be fixedly mounted relative to a support surface 115 such as a floor, table top, stand or other support surface.

[0064] The peeling apparatus 101 further includes a vacuum attachment member 117 configured to be releasably vacuum attached relative to a leading peripheral surface portion of a second major surface of the a carrier substrate. In order to facilitate the vacuum attachment, the vacuum attachment member can include one or more vacuum ports. For instance, as shown in FIG. 4, the one or more vacuum ports can comprise a plurality of vacuum ports 401 open at a surface 403 (e.g., a substantially planar surface) of the vacuum attachment member 117. In one example, the plurality of vacuum ports 401 may be arranged in a pattern to distribute force along a width "W2" of the vacuum attachment member 117.

[0065] The plurality of vacuum ports 401 may be in fluid communication with a vacuum source 118 such as vacuum tank, vacuum pump, etc. As shown in FIGS. 1 and 9, a vacuum conduit 905, such as a flexible hose, may provide fluid communication between the plurality of vacuum ports 401 and the vacuum source 118. In one example, as shown in FIG. 9, a vacuum chamber 907 may be placed in fluid communication with the plurality of vacuum ports 401 such that the plurality of vacuum ports 401 are in fluid communication with the vacuum conduit 905.

[0066] The vacuum attachment member 117 may further include a standoff that, in some examples, may prevent actual engagement between the vacuum attachment member 117 and the second major surface of the carrier substrate. For instance, the standoff can act as a bumper to protect the carrier substrate from damage due to direct contact between the vacuum attachment member and the second major surface of the carrier substrate. As schematically shown in FIG. 4, one example standoff, if provided, may comprise a peripheral ring-shaped standoff 405 that circumscribes the plurality of vacuum ports 401. The standoff 405 can comprise various materials such as a polymeric material and, in some examples, can extend a distance of about 1.6 mm (e.g., 1/16 of an inch) from the surface 403 of the vacuum attachment member 117.

[0067] Referring to FIGS. 1 and 4, the peeling apparatus 101 further includes an arm 119 supporting the vacuum attachment member 117. As shown, the arm 119 can comprise a plate although the arm may comprise a frame, beam, or other structure configured to support the vacuum attachment member 117. In some examples, the arm 119 can further include a length "L2" that is less than the length "LI" of the vacuum plate 103. Providing the arm 119 with the relatively short length "L2" can allow the vacuum attachment member 117 to extend to the outer end of the vacuum plate 103 in examples where the vacuum attachment member 117 is optionally attached to the outer end of the arm 119. Allowing the vacuum attachment member 117 to extend to the outer end of the vacuum plate 103 can help increase the leverage in applications and/or accommodate applications where the leading end of the carrier substrate is vacuum attached at or near a leading edge 121 of the vacuum plate 103.

[0068] In one example, the vacuum attachment member 117 is pivotally attached relative to the arm. For instance, as shown in FIG. 1, the peeling apparatus 101 can include a hinge 116 to allow pivoting of the vacuum attachment relative to the arm 119, for example, from the position shown in FIG. 9 to the position shown in FIG. 10. In some examples, the vacuum attachment member 117 may be configured to pivot through an angle "A" of from greater than 0° to about 15° although other angles may be provided in further examples. In further examples, the vacuum attachment member 117 may be confined to pivot a maximum angle "A" relative to the arm 119, for example, from greater than 0° to about 15° although other maximum angles may be provided in further examples. Confining the pivot angle can be achieved in a variety of ways. For example, a wedge-shaped opening can exist between an abutment surface 117a of the vacuum attachment member 117 and an abutment surface 909 of the arm 119. Consequently, once the vacuum attachment member 117 pivots through the maximum angle "A", as shown in FIG. 10, the abutment surfaces 117a, 909 abut one another, thereby acting as a stop to prevent further pivoting between the vacuum attachment member 117 and the arm 119. [0069] The arm 119 is also pivotally attached relative to the vacuum plate 103. For example, as shown in FIG. 1, the trailing end 123 of the vacuum plate 103 can be pivotally attached relative to a trailing end 125 of the arm 119 with a hinge. In some example, the hinge can comprise a float hinge 127 although fixed hinge configurations may be used in alternative examples. The float hinge 127 can include a hinge pin 129 configured to translate and rotate within the slot 131. Consequently, the float hinge 127 can allow different thickness substrate stacks to be processed with the peeling apparatus 101.

[0070] As shown in FIG. 1, the peeling apparatus 101 can also include an actuator 133 configured to apply a force "F" to the vacuum attachment member 117 to lift the vacuum attachment member 117 and consequently cause the arm 119 to pivot in direction 135 about the float hinge 127. In just one example, the force "F" can be applied through a link 137 connected (e.g., with hook 138) to a flexible filament 139 (e.g., wire, cable, etc). For instance, as shown in FIG. 2, one end 139a of the filament 139 can be attached to a first pin 201a extending from a first side of the vacuum attachment member 117 while the other end 139b of the filament 139 can be attached to a second pin 201b extending from a second side of the vacuum attachment member 117. Application of the force "F" through the link 137 can result in application of tensile forces "Fl", "F2" to the first pin 201a and second pin 201b. Moreover, as shown in FIG. 1, the moment arm about the float hinge 127 is maximized since the pins 201a, 201b are positioned at the outermost leading end of the vacuum attachment member 117. As such the leverage may be maximized to more efficiently apply the force "F" to initiate peeling of the substrates.

[0071] As further illustrated in FIGS. 1 and 2, the peeling apparatus 101 may also include a load sensor 141 configured to sense the force "F" being applied by the actuator 133. Information from the load sensor 141 may be sent back to a control device 143 (e.g., programmable logic controller) by way of communication line 141a. The control device 143 can be configured to (e.g., "programmed to", "encoded to", designed to", and/or "made to") control the actuator 133 by way of communication line 133a and the vacuum sources 104, 118 by way of respective communication lines 104a, 118a.

[0072] Methods of processing will now be described with initial reference to FIG. 16. The method can start with step 1601 with a first substrate including a first major surface of the first substrate removably bonded to a first major surface of carrier substrate. Throughout the application, the first substrate can be removably bonded to the carrier substrate by a polymer binding agent or other material that can withstand processing conditions while permitting the substrates to be subsequently peeled at least partially apart.

[0073] In one example of step 1601, as shown in FIGS. 6-12, the method can start with a first substrate 601 comprising a glass substrate (e.g., a thin, flexible glass substrate) or a silicon wafer. The first substrate 601 may be made of one or more layers. For example, the first substrate 601 may be a display panel including a backplane substrate, a cover substrate, and display elements disposed therebetween. The method can also start with a first carrier substrate 603 (e.g., glass carrier substrate) and a second carrier substrate 605 (e.g., glass carrier substrate) with the first substrate 601 sandwiched between the first and second carrier substrates 603, 605. As shown in FIG. 9, in some examples, the first substrate 601 can include a thickness Tl from about 100 microns to about 300 microns between a first major surface 601a and a second major surface 601b of the first substrate 601. As further shown in FIG. 9, in some examples, the first and second carrier substrates 603, 605 can each include a thickness T2 from about 300 microns to about 700 microns between a respective first major surface 603a, 605a and a respective second major surface 603b, 605b of the respective carrier substrates 603, 605. As further illustrated in FIG. 9, in some examples, the thickness T2 of the carrier substrates 603, 605 can be greater than the thickness Tl of the first substrate 601. Providing relatively thicker carrier substrates can help increase the effective stiffness of the first substrate (e.g., glass substrate or silicon wafer) to facilitate processing of the first substrate. A relatively thicker carrier substrate can also help significantly contribute to increasing the effective stiffness of the first substrate bonded to the second substrate.

[0074] As illustrated in FIG. 9, the first major surface 603a of the first carrier substrate 603 can be removably bonded to the first major surface 601a of the first substrate 601. Likewise, the first major surface 605a of the second carrier substrate 605 can be removably bonded to the second major surface 601b of the first substrate 601. Moreover, as further shown in FIG. 9 the carrier substrates 603, 605 can each include a footprint that is larger than a footprint of the first substrate 601. Indeed, the leading peripheral edges 911, 913 of the respective carrier substrates 603, 605 each extend beyond a leading peripheral edge 915 of the first substrate 601. In addition, the trailing peripheral edges 917, 919 of the respective carrier substrates 603, 605 can each extend beyond a trailing peripheral edge 921 of the first substrate 601. In fact, in some examples, all of the peripheral edges of the carrier substrates 603, 605 can optionally extend beyond the corresponding peripheral edges of the first substrate 601 by various distances, for example from about 0.5 mm to about 3 mm. Providing the carrier substrates 603, 605 with a larger footprint than the first substrate 601 can help protect the relatively fragile peripheral edges of the first substrate from damage during processing (e.g., handling). Indeed, any impact to the edges of the bonded substrates would tend to occur at the outwardly extending peripheral edges of one of the carrier substrates 603, 605 that would act to protect the relatively fragile outer peripheral edges of the first substrate 601.

[0075] Although not shown in FIGS. 6-12, the footprint of the first substrate 601 and the carrier substrates 603, 605 may be substantially equal in further examples. Providing substantially equal footprints may simplify manufacturing. For example, the first substrate or a layer of the first substrate and one or more of the carrier substrates may be first bonded together and then the bonded substrates may be separated along a common separation path wherein the substrates consequently have substantially identical footprints.

[0076] In still another example, although not shown in FIGS. 6-12, the first substrate 601 may have a footprint that is larger than one or more of the carrier substrates 603, 605 such that one or all of the outer peripheral edges of the first substrate extend beyond the respective outer peripheral edges of the respective carrier substrate. Alternatively, regardless of the relative footprint size, although not shown, the leading peripheral edge 915 of the first substrate can optionally include an overhung portion (e.g., tab) that extends beyond the leading peripheral edges 911, 913 of the respective carrier substrates 603, 605, for example, from about 50 microns to about 150 microns such as about 100 microns. Such examples can be beneficial to help peel the leading peripheral edge of the carrier substrates from the first substrate.

[0077] As further shown in FIG. 16, any of the methods of the disclosure can optionally proceed along arrow 1603 from the start 1601 to a step 1605 of processing the first substrate 601, or a layer of the first substrate, while the first substrate 601 is bonded to at least one of the carrier substrates 603, 605. The first substrate 601, or the layer of the first substrate, can be processed, for example, to include electronics, color filters, touch sensors, liquid crystal wells and other electronics in display applications. In another example, processing can include etching of the glass or otherwise working the glass substrate. When using a silicon wafer, processing can include cutting the silicon wafer into smaller pieces or otherwise processing the silicon wafer to manufacture electronic components.

[0078] As shown by arrow 1607, after the step 1605 of processing, the method can then proceed to the step 1609 of peeling the leading peripheral edge 911 of the first carrier substrate 603 from the first substrate 601 by applying pressure to a leading peripheral surface 923 portion of the second major surface 603b of the first carrier substrate 603. Alternatively, as indicated by arrow 1611, the method can proceed directly from the start 1601 to the step 1609 of peeling. For instance, the method may start at step 1601 with the processing step already carried out.

[0079] In order to prepare for the step 1609 of peeling, as shown in FIG. 5, the arm 119 together with the vacuum attachment member 117 attached to a distal end of the arm can be pivoted in direction 501 about the float hinge 127 to an open orientation.

[0080] Next, as shown in FIG. 6, after the second carrier substrate 605 is positioned over the vacuum plate 103. The vacuum source 104 can apply vacuum and consequent suction through the plurality of vacuum ports 301. The second major surface 605b of the second carrier substrate 605 is thereafter vacuum attached to the surface 303 of the vacuum plate 103. Once vacuum attached, the shape of the second carrier substrate 605 and consequently the shape of the first carrier substrate 601 bonded to the second carrier substrate 605 have a shape that is fixed. Indeed, the step of vacuum attaching the second carrier substrate 605 with the bonded first carrier substrate 601 to the vacuum plate 103 fixes the shape of the first substrate 601. In the illustrated example, the first substrate 601 can be fixed in a substantially flat planar shape although other shapes may be desired in further examples. Fixing the shape can help prevent damage to the first substrate 601 and/or electrical components or other features provided by processing the first substrate 601 during the step of peeling.

[0081] Before, during or after vacuum attaching the second carrier substrate 605 to the vacuum plate 103, the arm 119 together with the vacuum attachment member 117 can be pivoted in direction 607 about the float hinge 127 to a closed orientation shown in FIG. 7. In the closed orientation shown in FIG. 7, the arm 119 extends across the first carrier substrate 603 in a direction from the trailing peripheral edge 917 to the leading peripheral edge 911 of the first carrier substrate 603. As further shown in FIG. 7, the hinge pin 129 may travel up the slot 131 of the float hinge 127 in response to the arm being closed over the overall thickness of the first substrate and the carrier substrates.

[0082] Optionally, before beginning the step 1609 of peeling, the method may include the step 1610 of reducing a bond strength between the first carrier substrate 603 and the first substrate 601. For instance, as shown in FIG. 7, a razor 701 or other device can be used to attack an interface 703 to reduce the bond strength, thereby facilitating the initial peeling of the first carrier substrate from the first substrate.

[0083] As shown in FIG. 7, the step 1609 of peeling can include the step of vacuum attaching the attachment member 117 to the leading peripheral surface portion 923 of the second major surface 603b of the first carrier substrate 603. Indeed, the vacuum source 118 can apply vacuum and consequent suction through the plurality of vacuum ports 401 such that the leading peripheral surface portion 923 is vacuum attached to the surface 403 of the vacuum attachment member 117.

[0084] As shown in FIG. 8, the leading peripheral surface portion 923 of the first carrier substrate 603 can include a length "L3" defined between a first lateral edge 801a and a second lateral edge 801b of the first carrier substrate 603. As shown in the figures, the length "L3" extends in the same direction as the width "Wl" of the vacuum plate 103. In some examples, vacuum attachment provided by the vacuum surface 403 of the vacuum attachment member 117 extends along substantially the entire length "L3" of the leading peripheral surface portion 923 of the carrier substrate 603. In further examples, the vacuum attachment may extend from about 70% to about 100% of the length "L3", such as from about 85% to about 100%, such as from about 90% to about 100%, such as about 95% to about 100% of the length "L3". Increasing the extent to which the vacuum attachment extends along the length "L3" can help evenly distribute the pressure applied by the vacuum attachment member 117 across the length "L3" of the leading peripheral edge 911 to reduce stress concentrations and allow simultaneous peeling along the entire length "L3".

[0085] The step 1609 of peeling can then apply the force "F" to the vacuum attachment member 117 that consequently applies a corresponding pressure to the leading peripheral surface portion 923. Indeed, with reference to FIG. 2, the actuator 133 can apply the force "F" in the upward direction that causes tensile forces "Fl" and "F2" to be applied to the pins 201a, 201b of the vacuum attachment member 117. Consequently, the vacuum attachment member 117 distributes this force over the vacuum surface 403 to apply the pressure cross the area of the leading peripheral surface portion 923.

[0086] As shown by the pressure distribution represented schematically by a row of parallel arrows in FIG. 8, the method can uniformly apply the pressure to the leading peripheral surface portion 923 along the length "L3" of the leading peripheral surface portion 923 of the first carrier substrate 603. As such, stress can be distributed evenly across the leading peripheral edge 911 to avoid unnecessarily high stress concentrations along the leading peripheral edge. As shown in FIG. 9, since the force is being applied a distance "D" from the hinge 116, the force can be concentrated at the interface 703 between the leading peripheral edge 911 and the first substrate 601. Eventually, as shown in FIG. 10, the stress at the leading peripheral edge 911 results in an initial separation 1001 between the leading peripheral edge 911 and the first substrate 601 wherein an outer portion 1003 of the first carrier substrate 603 is pivoted about hinge 116. Initial separation may begin at any location along the length "L3" of the leading peripheral surface portion. Alternatively, in some examples, the step of peeling can peel the leading peripheral edge 911 of the first carrier substrate 603 from the first substrate 601 substantially simultaneously along the entire length "L3" of the leading peripheral surface portion 923. Simultaneous peeling along the entire length "L3" of the leading peripheral surface portion 923 can be achieved with uniform application of pressure along the entire length of the leading peripheral surface portion 923 and can help reduce unnecessary stress spikes along the leading peripheral edge 911 that may otherwise damage the first carrier substrate 603.

[0087] Sometime after the step 1609 of peeling the leading peripheral edge 911 of the first carrier substrate 603, the method can optionally include the step 1611 of determining a bond strength between the leading peripheral edge 911 (e.g., edge portion) of the first carrier substrate 603 and the first substrate 601 based on information obtained during the step 1609 of peeling. For instance, information (e.g., a force measurement) from the load sensor 141 can be transmitted by the communication line 141a to the control device 143. The control device 143 can be configured to monitor the information from the load sensor 141 and may be further configured to identify when the initial separation 1001 occurs due to a spike in the information, such as a force measurement, that occurs at the time of the initial separation 1001. The information provided by the load sensor 141 at the time of the initial separation 1001 can be used to determine (e.g., calculate) the bond strength between the leading peripheral edge 911 of the first carrier substrate 603 and the first substrate 601. The bond strength can be used in a wide variety of ways. For instance, determining the bond strength can be used to help determine the specifications of the first substrate bonded to the carrier substrate. This information can be provided to vendors that may desire this information for appropriate further processing of the first substrate. The bond strength can also be provided as feedback to the control device 143 for modifying a subsequent process of separating a subsequent first carrier substrate from a subsequent first substrate. Indeed, the series of separation procedures may be assumed to involve substrates with similar bonding strength. As such, feedback of the bonding strength can be used to help fine tune the process to increase efficiency and effectiveness of separation (e.g., reducing time to initial separation, maintaining a minimum bend radius while separating, etc.).

[0088] After the step 1609 of peeling the leading peripheral edge 911, the method can further include the step 1613 of completely removing the first carrier substrate 603 from the first substrate 601. In still another example, as shown in FIGS. 11 and 12 the step 1613 of completely removing the first carrier substrate 603 from the first substrate 601 comprises completely peeling the first carrier substrate from the first substrate. Indeed, vacuum attachment member 117 can be lifted while the arm 119 pivots in direction 135 about the float hinge 127 to such that the peel apparatus 101 achieves the open orientation. As shown in FIGS. 11 and 12, in some examples, the vacuum plate 103 can optionally be configured to translate along a translation axis 105 defined by the peeling apparatus 101 (see FIG. 1) in the first direction 107a while the attachment member 117 is lifted in direction 1101. In some directions, direction 1101 may be perpendicular to direction 107a although other angles may be provided in further examples. Allowing the vacuum plate 103 to translate along direction 107a while the attachment member 117 is lifted can be beneficial to direct the force in a vertical direction without necessarily moving the position of the actuator 133 to more effectively apply the force to the peeling procedure. In the open orientation shown in FIG. 12, the first carrier substrate 603 is completely peeled from the first substrate 601 even though the figure illustrates the first carrier substrate 603 touching (without adhesion) on an outer corner of the first substrate 601.

[0089] In some examples, during the step of peeling (e.g., initially peeling, partially peeling, completely peeling) the first substrate from the second substrate, the method can further include the step 1615 of controlling a bend radius "R" (see FIG. 11) of the first carrier substrate 603. Indeed, in some examples, the bend radius "R" of the carrier substrate may be controlled while the arm 119 pivots relative to the first substrate 601. There may be a desire to ensure that the first carrier substrate 603 is not peeled in such a way that the bend radius is smaller than a predetermined minimum bend radius. The predetermined minimum bend radius may be a radius that the first carrier substrate 603 may be safely bent without a significant probability of breaking or otherwise being damaged. In one example, the control device 143 may control the actuator 133 to provide a predetermined varying force "F" over time after initial separation 1001. Varying the force "F" in a controlled manner over time can be designed to ensure that the bend radius "R" does not fall below a predetermined minimum bend radius. In further examples, although not shown, a proximity sensor may be provided that senses the actual bend radius of the first carrier substrate wherein the control device 143 can appropriately modify the force "F" applied by the actuator based on feedback from the proximity sensor.

[0090] Once the step 1613 of completely removing the first carrier substrate 603 from the first substrate 601 is complete, the method can end at step 1617.

[0091] The method described with respect to FIG. 16 and FIGS. 1-12 can be carried out with a wide range of substrates. FIGS. 13-15 illustrate another example that, unless otherwise noted, can include identical steps and/or equivalent steps discussed with respect to FIG. 16 and FIGS. 1-12 above. As shown in FIG. 13-15, after removing the first carrier substrate 603 (or where there is only one carrier substrate), the second carrier substrate 605 may also be removed from the first substrate 601. Indeed, as shown in FIG. 13, the first substrate 601 can be vacuum attached to the vacuum plate 103. As shown in FIG. 14, the vacuum attachment member 117 can be vacuum attached to the leading peripheral surface portion 1401 of the second major surface 605b of the second carrier substrate 605. Similarly as discussed above, the second carrier substrate 605 can be peeled, and eventually completely peeled, from the first substrate 601 as shown in FIG. 15.

[0092] These are just a few examples of variations that can be made to the apparatus and method described above. Other various modifications and variations can be made without departing from the spirit and scope of the claims.