APPARATUS FOR OBTAINING DOUBLE STABLE RESISTANCE VALUES, METHOD FOR MANUFACTURING THE SAME, METAL OXIDE THIN FILM AND METHOD FOR MANUFACTURING THE SAME

Title:

APPARATUS FOR OBTAINING DOUBLE STABLE RESISTANCE VALUES, METHOD FOR MANUFACTURING THE SAME, METAL OXIDE THIN FILM AND METHOD FOR MANUFACTURING THE SAME

Document Type and Number:

WIPO Patent Application WO/2006/009218

Kind Code:

A1

Abstract:

A ferroelectric layer (104) is sandwiched by a lower electrode layer (103) and an upper electrode (105), and a prescribed voltage (DC, pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104). When a stable high resistance mode is switched to a low resistance mode, memory operation is performed. Reading can be easily performed by reading a current value at a time when a prescribed voltage is applied on the upper electrode (105).

Inventors:

JIN YOSHITO (JP)
SAKAI HIDEAKI (JP)
SHIMADA MASARU (JP)

Application Number:

PCT/JP2005/013413

Publication Date:

January 26, 2006

Filing Date:

July 21, 2005

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE (JP)
JIN YOSHITO (JP)
SAKAI HIDEAKI (JP)
SHIMADA MASARU (JP)

International Classes:

H01L21/316; H01L27/10; H01L45/00; (IPC1-7): H01L27/10; H01L21/316; H01L45/00

Domestic Patent References:

WO2000049659A1

2000-08-24

Foreign References:

JPH08306806A	1996-11-22
JPH07263646A	1995-10-13
JPH08161933A	1996-06-21
JPS504986A	1975-01-20
JPS4934390B1	1974-09-13
EP1335417A2	2003-08-13
EP1628352A1	2006-02-22
US3796926A	1974-03-12

Other References: