Title:
APPARATUS FOR PREVENTING POWDER DEPOSITION IN EXHAUST PIPE FOR SEMICONDUCTOR MANUFACTURING FACILITY, EXHAUST EQUIPMENT COMPRISING SAME, AND METHOD FOR PREVENTING POWDER DEPOSITION IN EXHAUST PIPE BY USING SAME
Document Type and Number:
WIPO Patent Application WO/2020/235873
Kind Code:
A1
Abstract:
According to the present invention, provided is exhaust equipment for a semiconductor manufacturing facility, the exhaust equipment comprising: an exhaust pipe through which exhaust gas, discharged from a processing chamber of a semiconductor manufacturing facility, flows; a vacuum pump for generating pressure so that the exhaust gas flows in the exhaust pipe; and a powder deposition preventing apparatus for preventing powder deposition in the exhaust pipe, wherein the powder deposition preventing apparatus forms a plasma treatment region where a plasma reaction occurs, in order to prevent powder from being generated in the exhaust pipe by ammonia (NH3) gas contained in the exhaust gas, and decomposes the ammonia gas (NH3) contained in the exhaust gas by using the plasma reaction, to be converted into a mixed gas comprising nitrogen (N2) gas, hydrogen (H2) gas, excited nitrogen atoms (N*), excited hydrogen atoms (H*), hydrazine (N2H4) gas, and diazine (N2H2) gas.
Inventors:
KIM HO SIK (KR)
BAE JIN HO (KR)
KIM WOO TAE (KR)
LEE YU JIN (KR)
KIM HYUNG JUN (KR)
LEE JONGTAEK (KR)
BAE JIN HO (KR)
KIM WOO TAE (KR)
LEE YU JIN (KR)
KIM HYUNG JUN (KR)
LEE JONGTAEK (KR)
Application Number:
PCT/KR2020/006395
Publication Date:
November 26, 2020
Filing Date:
May 15, 2020
Export Citation:
Assignee:
LOT CES CO LTD (KR)
LOT VACUUM CO LTD (KR)
LOT VACUUM CO LTD (KR)
International Classes:
H01L21/67; F16L55/24; H01J37/32
Foreign References:
| KR100656538B1 | 2006-12-11 | |||
| KR20050094546A | 2005-09-28 | |||
| KR101792633B1 | 2017-11-02 | |||
| KR101541817B1 | 2015-08-04 | |||
| JP2001214272A | 2001-08-07 | |||
| KR102077759B1 | 2020-02-14 |
Attorney, Agent or Firm:
JEON, Yong Joon (KR)
Download PDF: