Title:
APPLICATION OF DIANTIMONY TRIOXIDE MATERIAL AS SEMICONDUCTOR INTEGRATED CIRCUIT INTER-LAYER OR INTER-METAL DIELECTRIC MATERIAL
Document Type and Number:
WIPO Patent Application WO/2021/244512
Kind Code:
A1
Abstract:
New use of using diantimony trioxide as a semiconductor integrated circuit inter-layer or inter-metal dielectric material in the technical field of nano materials, the field of microelectronics, and the field of integrated circuit manufacturing. A diantimony trioxide material is a molecular crystal, which is of a two-dimensional or three-dimensional structure formed by self-assembly of Sb4O6 cage-like molecules by means of van der Waals' force. The material is α-phase diantimony trioxide, having (1) a low dielectric constant k: 1.8-2.5; (2) a wide energy bandgap Eg: 5.5-5.7 eV; (3) resistance to high temperature of 550°C under normal pressure; (4) ultrahigh electric breakdown field strength EB: 1.4-2.5 MV/cm; and (5) Young's modulus E: 14.4-16 GPa, and mechanical strength: 0.93-1.32 GPa. Diantimony trioxide is a novel low dielectric constant material that has not been discovered and has not been developed, can be used for the semiconductor integrated circuit inter-layer or inter-metal dielectric material, and has great commercial potential and value.
Inventors:
WANG HUNGTA (CN)
SUN ZHAORU (CN)
PENG JUN (CN)
LU SHENGNAN (CN)
WU CONGCONG (CN)
PU WEIWEN (CN)
WU NAN (CN)
YANG XIANZHONG (CN)
SUN ZHAORU (CN)
PENG JUN (CN)
LU SHENGNAN (CN)
WU CONGCONG (CN)
PU WEIWEN (CN)
WU NAN (CN)
YANG XIANZHONG (CN)
Application Number:
PCT/CN2021/097622
Publication Date:
December 09, 2021
Filing Date:
June 01, 2021
Export Citation:
Assignee:
UNIV SHANGHAI TECH (CN)
International Classes:
H01L23/532
Foreign References:
| CN110284191A | 2019-09-27 | |||
| CN102132367A | 2011-07-20 | |||
| US20060163655A1 | 2006-07-27 | |||
| US20070145606A1 | 2007-06-28 |
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (CN)
Download PDF: