Title:
ARC-BASED FILM FORMATION DEVICE AND FILM FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/058587
Kind Code:
A1
Abstract:
Provided is an arc-based film formation technology capable of stably forming a smooth DLC film by suppressing pulverized particles discharged from a cathode from being taken into the DLC film being formed. The arc-based film formation device is for forming a carbon film by generating arc discharge between a columnar cathode and anode, thereby causing carbon to sublimate from an arc spot formed on a surface of the cathode. The arc-based film formation device is provided with: a cathode holding means for holding the cathode; a base material holding means for holding a base material; a vacuum chamber in which the cathode holding means and the base material holding means are housed; an arc power supply connected between the cathode and the anode; a discharge starting means for causing the arc spot to be formed on an outer peripheral surface in the vicinity of the tip of the cathode; a magnetic field generation means for generating a magnetic field for forming lines of magnetic force along the axial direction of the cathode; and a space formation part where a cylindrical space is formed in a peripheral direction of the cathode, wherein an opening having a smaller diameter than the diameter of the space formation part is formed on the base material side of the space formation part.
Inventors:
OKAZAKI NAOTO (JP)
SHIBATA AKINORI (JP)
WATANABE JUN (JP)
MORIGUCHI HIDEKI (JP)
SHIBATA AKINORI (JP)
WATANABE JUN (JP)
MORIGUCHI HIDEKI (JP)
Application Number:
PCT/JP2018/007419
Publication Date:
March 28, 2019
Filing Date:
February 28, 2018
Export Citation:
Assignee:
NIPPON ITF INC (JP)
International Classes:
C23C14/24; B23B27/14; B23B27/20; C23C14/06
Foreign References:
JP2017013136A | 2017-01-19 | |||
JP2001192864A | 2001-07-17 | |||
JP2002285325A | 2002-10-03 | |||
JP2002327262A | 2002-11-15 | |||
JPH06220621A | 1994-08-09 | |||
JP2017004678A | 2017-01-05 |
Attorney, Agent or Firm:
JODAI Tetsuji et al. (JP)
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