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Patent Searching and Data


Title:
ARRAY SUBSTRATE MANUFACTURING METHOD AND ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/169740
Kind Code:
A1
Abstract:
An array substrate manufacturing method and an array substrate. The method comprises: forming a gate (110), a gate insulating layer (120), a semiconductor layer, a source/drain electrode layer (150), and a photoresist layer (160) on a substrate (100); performing patterning on the photoresist layer to form a patterned photoresist layer; performing wet etching on the source/drain electrode layer at least once using the patterned photoresist layer, performing dry etching on the semiconductor layer at least once, and performing ashing processing on the photoresist layer between the wet etching and the dry etching, the ratio of a lateral etch rate to a longitudinal etch rate of the ashing process ranging from 1:0.9 to 1:1.5.

Inventors:
CHO EN-TSUNG (CN)
TIAN YIQUN (CN)
Application Number:
PCT/CN2018/087772
Publication Date:
September 12, 2019
Filing Date:
May 22, 2018
Export Citation:
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Assignee:
HKC CORP LTD (CN)
CHONGQING HKC OPTOELECTRONICS TECH CO LTD (CN)
International Classes:
H01L21/77; H01L27/12
Foreign References:
CN102148259A2011-08-10
CN106684037A2017-05-17
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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