Title:
ASSEMBLY OF PIEZOELECTRIC MATERIAL SUBSTRATE AND SUPPORT SUBSTRATE, AND METHOD FOR MANUFACTURING SAID ASSEMBLY
Document Type and Number:
WIPO Patent Application WO/2019/130857
Kind Code:
A1
Abstract:
[Problem] To suppress characteristic deterioration of an assembly when joining a piezoelectric material substrate consisting of a material selected from the group consisting of lithium niobate, lithium tantalate, and lithium niobate-lithium tantalate, and a support substrate on which a silicon oxide layer is provided. [Solution] Assemblies 7, 7A comprise: a support substrate 4; a silicon oxide layer 5 provided on the support substrate 4; and piezoelectric material substrates 1, 1A consisting of a material selected from the group consisting of lithium niobate, lithium tantalate, and lithium niobate-lithium tantalate provided on the silicon oxide layer 5. The nitrogen concentration in an interface A between the piezoelectric material substrates 1, 1A and the silicon oxide layer 5 is higher than the nitrogen concentration in the interface between the silicon oxide layer 5 and the support substrate 1.
Inventors:
HORI YUJI (JP)
YAMADERA TAKAHIRO (JP)
TAKAGAKI TATSURO (JP)
YAMADERA TAKAHIRO (JP)
TAKAGAKI TATSURO (JP)
Application Number:
PCT/JP2018/041798
Publication Date:
July 04, 2019
Filing Date:
November 12, 2018
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H03H9/25; B32B9/00; C30B29/30; C30B33/06; H01L21/02; H01L41/053; H01L41/09; H01L41/187; H01L41/31; H01L41/337; H03H3/08
Domestic Patent References:
| WO2017163729A1 | 2017-09-28 | |||
| WO2006114922A1 | 2006-11-02 |
Foreign References:
| JP2017123576A | 2017-07-13 | |||
| JP2018207355A | 2018-12-27 |
Attorney, Agent or Firm:
HOSODA Masutoshi et al. (JP)
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