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Title:
ASSEMBLY OF PIEZOELECTRIC MATERIAL SUBSTRATE AND SUPPORTING SUBSTRATE, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2019/142483
Kind Code:
A1
Abstract:
[Problem] To improve the bonding strength in the bonding of a piezoelectric material substrate made from lithium tantalite or the like to a supporting substrate having a silicon oxide layer formed thereon. [Solution] An assembly is provided with a supporting substrate 4, a silicon oxide layer 5 provided on the supporting substrate 4, and a piezoelectric material substrate 1 provided on the silicon oxide layer 5 and made from a material selected from the group consisting of lithium niobate, lithium tantalate and (lithium niobate)-(lithium tantalate). The surface resistivity of the silicon oxide layer 5 side of the piezoelectric material substrate 1 is 1.7 × 1015 Ω/□ or more.

Inventors:
HORI Yuji (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
YAMADERA Takahiro (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
TAKAGAKI Tatsuro (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
Application Number:
JP2018/042630
Publication Date:
July 25, 2019
Filing Date:
November 19, 2018
Export Citation:
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Assignee:
NGK INSULATORS, LTD. (2-56, Suda-cho Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
International Classes:
H03H9/25; H03H3/08
Domestic Patent References:
WO2016208236A12016-12-29
WO2013031651A12013-03-07
Foreign References:
US20070028433A12007-02-08
JP2001168676A2001-06-22
JP2010068484A2010-03-25
Attorney, Agent or Firm:
HOSODA Masutoshi et al. (HAIX Hirakawacho BLDG. 4F, 10-10 HIRAKAWACHO 2-CHOME, CHIYODA-K, Tokyo 93, 〒1020093, JP)
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