Title:
ATOMIC LAYER DEPOSITION OF HIGH K DIELECTRIC FILMS
Document Type and Number:
WIPO Patent Application WO2004008827
Kind Code:
A3
Abstract:
A method of processing a semiconductor substrate includes reacting in a reactor a first reactant gas, evacuating the first reactant gas from the reactor, reacting a second reactant gas, and evacuating the second reactant gas. The reacting of the first reactant gas reacts the first reactant gas with an exposed surface of the semiconductor substrate in a reactor to convert the exposed surface into a solid mono-layer. The reacting of the second reactant gas reacts the second reactant gas with the solid mono-layer in the reactor to convert the solid mono-layer into a gaseous compound. The evacuating of the second reactant gas also evacuates the gaseous compound from the reactor.
Inventors:
LEE SANG-IN (US)
SENZAKI YOSHIHIDE (US)
SENZAKI YOSHIHIDE (US)
Application Number:
PCT/US2003/022712
Publication Date:
June 03, 2004
Filing Date:
July 21, 2003
Export Citation:
Assignee:
AVIZA TECH INC (US)
LEE SANG-IN (US)
SENZAKI YOSHIHIDE (US)
LEE SANG-IN (US)
SENZAKI YOSHIHIDE (US)
International Classes:
C23C16/02; C23C16/40; C23C16/455; H01L21/314; C23C16/44; H01L21/316; (IPC1-7): H01L21/31; H01L21/469
Foreign References:
| US6351036B1 | 2002-02-26 | |||
| US6077775A | 2000-06-20 |
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