Title:
ATTENUATING EXTREME ULTRAVIOLET (EUV) PHASE-SHIFTING MASK FABRICATION METHOD
Document Type and Number:
WIPO Patent Application WO2002041077
Kind Code:
A3
Abstract:
An exemplary method of forming an attenuating extreme ultraviolet (EUV) phase-shifting mask (60) can include providing a multi-layer mirror (34) over an integrated circuit substrate (32) or a mask blank, providing a buffer layer (36) over the multi-layer mirror (34), providing a dual element material layer (38, 40) over the buffer layer (36), and selectively growing feature (66) on the integrated circuit substrate (32) or mask blank using a photon assisted chemical vapor deposition (CVD) process when depositing the dual element layer (38, 40).
Inventors:
GHANDEHARI KOUROS
LAFONTAINE BRUNO
SINGH BHANWAR
LAFONTAINE BRUNO
SINGH BHANWAR
Application Number:
PCT/US2001/051004
Publication Date:
December 04, 2003
Filing Date:
October 23, 2001
Export Citation:
Assignee:
ADVANCED MICRO DEVICES INC (US)
International Classes:
G03F1/00; (IPC1-7): G03F1/00; G03F1/14
Foreign References:
| US5641593A | 1997-06-24 | |||
| US5780187A | 1998-07-14 | |||
| US5328784A | 1994-07-12 | |||
| EP0708367A1 | 1996-04-24 |
Other References:
CHEN H L ET AL: "Simulation on a new reflection type attenuated phase shifting mask for extreme ultraviolet lithography", EMERGING LITHOGRAPHIC TECHNOLOGIES III, SANTA CLARA, CA, USA, 15-17 MARCH 1999, vol. 3676, pt.1-2, Proceedings of the SPIE - The International Society for Optical Engineering, 1999, SPIE-Int. Soc. Opt. Eng, USA, pages 578 - 586, XP002230586, ISSN: 0277-786X
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