Title:
AVALANCHE PHOTODIODE AND METHOD FOR PREPARING SAME
Document Type and Number:
WIPO Patent Application WO/2019/049718
Kind Code:
A1
Abstract:
According to the present invention, an n-type semiconductor layer (102), a multiplication layer (103), an electric field control layer (104), a light absorption layer (105) and a p-type semiconductor layer (106) are formed on a growth substrate (101), and then the p-type semiconductor layer (106) is attached to a transfer substrate (107). Thereafter, the growth substrate (101) is removed, and the n-type semiconductor layer (102) is processed to have an area smaller than the multiplication layer (103).
Inventors:
NADA MASAHIRO (JP)
MATSUZAKI HIDEAKI (JP)
MATSUZAKI HIDEAKI (JP)
Application Number:
PCT/JP2018/031674
Publication Date:
March 14, 2019
Filing Date:
August 28, 2018
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L31/107
Foreign References:
| US20160351743A1 | 2016-12-01 | |||
| US20080012104A1 | 2008-01-17 | |||
| US20080017883A1 | 2008-01-24 | |||
| US20130292741A1 | 2013-11-07 |
Other References:
J.C. CAMPBEL: "Recent Advances in Telecommunications Avalanche Photodiodes", JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 25, no. 1, 2007, pages 109 - 121, XP011175450, DOI: 10.1109/JLT.2006.888481
MENGYUAN HUANG ET AL.: "25 Gb/s Normal Incident Ge/Si Avalanche Photodiode", EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC, 2014
Y. MURAMOTOT. ISHIBASHI: "InP/InGaAs pin photodiode structure maximising bandwidth and efficiency", ELECTRONICS LETTERS, vol. 39, no. 24, 2003, XP006024476, DOI: 10.1049/el:20031116
See also references of EP 3680941A4
MENGYUAN HUANG ET AL.: "25 Gb/s Normal Incident Ge/Si Avalanche Photodiode", EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC, 2014
Y. MURAMOTOT. ISHIBASHI: "InP/InGaAs pin photodiode structure maximising bandwidth and efficiency", ELECTRONICS LETTERS, vol. 39, no. 24, 2003, XP006024476, DOI: 10.1049/el:20031116
See also references of EP 3680941A4
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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