Title:
AVALANCHE PHOTODIODE
Document Type and Number:
WIPO Patent Application WO/2017/094277
Kind Code:
A1
Abstract:
This avalanche photodiode is provided with: a first semiconductor layer (3) of a first conductivity type, which is formed in a substrate (1) of the first conductivity type; a second semiconductor layer (2) of a second conductivity type, which is formed below the first semiconductor layer (3); a third semiconductor layer (7) of the first conductivity type, which is formed in a shallow part of the first semiconductor layer (3) of the substrate and has a higher impurity concentration than the first semiconductor layer (3); a fourth semiconductor layer (6) of the first conductivity type, which is formed in a region directly below the third semiconductor layer (7) within the first semiconductor layer (3); a first contact (11) which is electrically connected to the first semiconductor layer (3); and a second contact (12) which is electrically connected to the second semiconductor layer (2). The impurity concentration of the fourth semiconductor layer (6) is higher than that of the first semiconductor layer (3) but lower than that of the third semiconductor layer (7).
Inventors:
NATSUAKI KAZUHIRO
TAKIMOTO TAKAHIRO
UCHIDA MASAYO
TAKIMOTO TAKAHIRO
UCHIDA MASAYO
Application Number:
PCT/JP2016/068629
Publication Date:
June 08, 2017
Filing Date:
June 23, 2016
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L31/107
Foreign References:
| JPH09232556A | 1997-09-05 | |||
| JP2001525117A | 2001-12-04 | |||
| US20130193546A1 | 2013-08-01 | |||
| US20130154044A1 | 2013-06-20 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Download PDF:
Previous Patent: SOFT GRIPPER AND BLOOD PRESSURE MEASURING CUFF COMPRISING SAME
Next Patent: PHOTO SENSOR
Next Patent: PHOTO SENSOR