BACK CHANNEL-ETCHED OXIDE SEMICONDUCTOR TFT SUBSTRATE AND PREPARATION METHOD THEREFOR - SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD

Title:

BACK CHANNEL-ETCHED OXIDE SEMICONDUCTOR TFT SUBSTRATE AND PREPARATION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2019/080254

Kind Code:

A1

Abstract:

A back channel-etched oxide semiconductor thin film transistor (TFT) substrate and a preparation method therefor. The preparation method for a back channel-etched oxide semiconductor TFT substrate comprises: configuring an active layer (40) as a dual layer structure, preparing a first oxide semiconductor layer (401) that is located at a lower layer according to normal deposition processing parameters, resulting in a normal density, and preparing a second oxide semiconductor layer (402) that is located at an upper layer by means of changing the deposition processing parameters, resulting in a higher density; the first oxide semiconductor layer (401) has a lower density and has a higher transfer rate, while the second oxide semiconductor layer (402) has a higher density, a lower number of thin film defects and stronger etching resistance, which may reduce the damage to a channel region (41) of the active layer (40) during the etching of a drain (51) and a source (52), while saving the photomask of an etching barrier layer, preparation costs being low.

More Like This:

JPH0613398	BIPOLAR TRANSISTOR AND SEMICONDUCTOR DEVICE WITH BIPOLAR TRANSISTOR AND MANUFACTURE THEREOF
WO/2011/054852	HYBRID DOUBLE BOX BACK GATE SILICON-ON-INSULATOR WAFERS WITH ENHANCED MOBILITY CHANNELS
JPH0527260	LIQUID CRYSTAL DISPLAY DEVICE AND PRODUCTION THEREOF

Inventors:

YU MINGJUE (CN)
HSU YUANJUN (CN)
ZHOU XINGYU (CN)

Application Number:

PCT/CN2017/113547

Publication Date:

May 02, 2019

Filing Date:

November 29, 2017

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)

International Classes:

H01L27/12; H01L27/32; H01L51/56

Foreign References:

CN104022044A	2014-09-03
CN106057679A	2016-10-26
CN103000628A	2013-03-27
CN105304650A	2016-02-03
US20140070210A1	2014-03-13

Attorney, Agent or Firm:

COMIPS INTELLECTUAL PROPERTY OFFICE (CN)

Download PDF:

View/Download PDF PDF Help

Previous Patent: DEVELOPER AND TRANSMISSION DEVICE THEREOF

Next Patent: TRANSPARENT OLED DISPLAY AND MANUFACTURING METHOD THEREFOR