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Title:
BACK-JUNCTION SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2016/125430
Kind Code:
A1
Abstract:
The present invention is a back-junction solar cell having an n-type region on at least a part of a non-light-receiving surface of a p-type single-crystal silicon substrate, wherein the back-junction solar cell is characterized in that the p-type single-crystal silicon substrate is gallium-doped, and the thickness of the p-type single-crystal silicon substrate is 250-1000 μm. A back-junction solar cell can thereby be provided for which yield during manufacturing is improved, and energy conversion efficiency of light incident from a light-receiving surface can be improved.

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Inventors:
MORI CHIKARA (JP)
WATABE TAKENORI (JP)
OTSUKA HIROYUKI (JP)
Application Number:
PCT/JP2016/000138
Publication Date:
August 11, 2016
Filing Date:
January 13, 2016
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
H01L31/068; H01L31/0216
Foreign References:
JP2001267610A2001-09-28
JPH11330517A1999-11-30
JP2012164961A2012-08-30
JP2007281168A2007-10-25
JP2002128591A2002-05-09
JP2006120945A2006-05-11
Attorney, Agent or Firm:
YOSHIMIYA, Mikio et al. (JP)
Good Miya Mikio (JP)
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