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Patent Searching and Data


Title:
BACK PROCESS OF FIELD STOP INSULATED GATE BIPOLAR TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2015/043396
Kind Code:
A1
Abstract:
A back process of a field stop insulated gate bipolar transistor comprises: providing a substrate, and growing an oxidizing layer on the front and the back of the substrate; injecting N-type ions into the back of the substrate; performing trap pushing, to make an area injected with N-type ions form a field stop layer; injecting P-type ions into the field stop layer, to form a back P+ layer, and performing trap pushing on the back P+ layer; and removing the oxidizing layer on the front of the substrate. By growing an oxidizing layer structure on the front of the substrate, the front of a wafer is protected, and the wafer is not easy to be scratched in a manufacturing process.

Inventors:
WANG GENYI (CN)
DENG XIAOSHE (CN)
ZHONG SHENGRONG (CN)
ZHOU DONGFEI (CN)
Application Number:
CN2014/086647
Publication Date:
April 02, 2015
Filing Date:
September 16, 2014
Export Citation:
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Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (214028, CN)
International Classes:
H01L21/331
Foreign References:
CN102693912A2012-09-26
CN102142372A2011-08-03
CN102347355A2012-02-08
JP2004273772A2004-09-30
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (510623, CN)
广州华进联合专利商标代理有限公司 (510623, CN)
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