Title:
BACKSIDE-ILLUMINATED ENERGY RAY DETECTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/125904
Kind Code:
A1
Abstract:
A backside-illuminated energy ray detection element (1) is provided with a semiconductor substrate (11) and a protective film (21). The semiconductor substrate (11) has a first main surface (11a) that serves as an energy ray incident surface and a second main surface (11b) that is on the opposite side from the first main surface (11a). The semiconductor substrate (11) is provided with a charge generating region (13), which generates charges corresponding to the incidence of an energy ray, on the second main surface (11b) side. The protective film (21) is provided on the second main surface (11b) of the semiconductor substrate (11) so as to cover at least the charge generating region (13), and contains silicon nitride or silicon oxynitride. The protective film (21) has a stress relaxation part for relaxing the stress generated in the protective film (21).
More Like This:
| JP2003197884 | SOLID-STATE DETECTOR |
| JPH054519 | [Name of device] Adhesion image sensor |
| JP2008016481 | SINGLE-PLATE SOLID-STATE IMAGING ELEMENT AND DIGITAL CAMERA |
Inventors:
MIYAZAKI YASUHITO (JP)
MAETA KENTARO (JP)
MURAMATSU MASAHARU (JP)
MAETA KENTARO (JP)
MURAMATSU MASAHARU (JP)
Application Number:
PCT/JP2014/051533
Publication Date:
August 21, 2014
Filing Date:
January 24, 2014
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
H01L27/14; H01L27/148; H04N5/367; H04N5/369
Foreign References:
| US20120034730A1 | 2012-02-09 | |||
| JP2012109496A | 2012-06-07 | |||
| JP2012023251A | 2012-02-02 | |||
| JP2004241743A | 2004-08-26 | |||
| JP2012099847A | 2012-05-24 | |||
| JPH10335624A | 1998-12-18 |
Other References:
See also references of EP 2958145A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
Download PDF: