Title:
BANDGAP REFERENCE CIRCUIT, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/043022
Kind Code:
A1
Abstract:
A bandgap reference circuit (20) comprises: a diode characteristic element group (22); a dynamic element matching circuit (23) which repeatedly performs an operation to select, from the diode characteristic element group (22), a first diode characteristic element group (22a) configured by connecting in parallel M diode characteristic elements, and a second diode characteristic element group (22b) configured by connecting in parallel N (≥M) diode characteristic elements, within a fixed period, while changing a combination of selected diode characteristic elements; a reference voltage generating circuit (30) for generating a reference voltage (VBG) on the basis of a difference between current densities of currents flowing through the first diode characteristic element group (22a) and the second diode characteristic element group (22b); and a second-order temperature coefficient adjusting circuit (37) for adjusting a second-order temperature coefficient of the generated reference voltage (VBG).
Inventors:
ITO KAZUHITO
KOBAYASHI HITOSHI
YAMADA MICHIKO
ENDO SATOSHI
TANG HONG MENG
KOBAYASHI HITOSHI
YAMADA MICHIKO
ENDO SATOSHI
TANG HONG MENG
Application Number:
PCT/JP2023/028202
Publication Date:
February 29, 2024
Filing Date:
August 01, 2023
Export Citation:
Assignee:
NUVOTON TECH CORPORATION JAPAN (JP)
NUVOTON TECH SINGAPORE PTE LTD (SG)
NUVOTON TECH SINGAPORE PTE LTD (SG)
International Classes:
G05F3/30
Foreign References:
| JP2007299294A | 2007-11-15 | |||
| JP2013525902A | 2013-06-20 | |||
| US10983547B1 | 2021-04-20 |
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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