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Title:
BARRIER FILM FOR SEMICONDUCTOR WIRING, SINTERED SPUTTERING TARGET, AND METHOD OF MANUFACTURING SPUTTERING TARGETS
Document Type and Number:
WIPO Patent Application WO/2010/119785
Kind Code:
A1
Abstract:
Provided is a barrier film for semiconductor wiring, said film including nickel, with the remainder comprising tungsten and unavoidable impurities, and having a composition of 70–90% tungsten and 10–30% nickel, with percentages inclusive and representing atomic percentages. Also provided is a sintered sputtering target for forming barrier films for semiconductor wiring, said barrier films characterized by a structure of tungsten diffused among nickel particles. Said sputtering target includes nickel, with the remainder comprising tungsten and unavoidable impurities, and has a composition of 70–90% tungsten and 10–30% nickel, with percentages inclusive and representing atomic percentages. The structure of the sputtering target comprises a tungsten matrix with the aforementioned nickel particles inside said matrix. Further provided is a method of manufacturing such sputtering targets. As so to not depend on nitriding reactions when sputtering, the target itself has the same composition as the barrier film. Reactions with semiconductor devices are effectively prevented. There are no particles created when sputtering. The sputtering target is particularly useful in creating barrier films and has excellent characteristics when forming barrier films.

Inventors:
SENDA Shinichiro (187-4 Usuba, Hanakawa-cho, Kitaibaraki-sh, Ibaraki 35, 〒3191535, JP)
仙田 真一郎 (〒35 茨城県北茨城市華川町臼場187番地4 JX日鉱日石金属株式会社 磯原工場内 Ibaraki, 〒3191535, JP)
YAMAKOSHI Yasuhiro (187-4 Usuba, Hanakawa-cho, Kitaibaraki-sh, Ibaraki 35, 〒3191535, JP)
Application Number:
JP2010/056152
Publication Date:
October 21, 2010
Filing Date:
April 05, 2010
Export Citation:
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Assignee:
JX Nippon Mining & Metals Corporation (6-3 Otemachi 2-chome, Chiyoda-ku Tokyo, 64, 〒1008164, JP)
JX日鉱日石金属株式会社 (〒64 東京都千代田区大手町二丁目6番3号 Tokyo, 〒1008164, JP)
SENDA Shinichiro (187-4 Usuba, Hanakawa-cho, Kitaibaraki-sh, Ibaraki 35, 〒3191535, JP)
仙田 真一郎 (〒35 茨城県北茨城市華川町臼場187番地4 JX日鉱日石金属株式会社 磯原工場内 Ibaraki, 〒3191535, JP)
International Classes:
C23C14/34; B22F3/14; C22C27/04; C23C14/14; H01L21/28; H01L21/285
Attorney, Agent or Firm:
OGOSHI Isamu (OGOSHI International Patent Office Daini-Toranomon Denki Bldg, 5F 3-1-10 Toranomon, Minato-k, Tokyo 01, 〒1050001, JP)
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