Title:
BARRIER FILM FOR SEMICONDUCTOR WIRING, SINTERED SPUTTERING TARGET, AND METHOD OF MANUFACTURING SPUTTERING TARGETS
Document Type and Number:
WIPO Patent Application WO/2010/119785
Kind Code:
A1
Abstract:
Provided is a barrier film for semiconductor wiring, said film including nickel, with the remainder comprising tungsten and unavoidable impurities, and having a composition of 70–90% tungsten and 10–30% nickel, with percentages inclusive and representing atomic percentages. Also provided is a sintered sputtering target for forming barrier films for semiconductor wiring, said barrier films characterized by a structure of tungsten diffused among nickel particles. Said sputtering target includes nickel, with the remainder comprising tungsten and unavoidable impurities, and has a composition of 70–90% tungsten and 10–30% nickel, with percentages inclusive and representing atomic percentages. The structure of the sputtering target comprises a tungsten matrix with the aforementioned nickel particles inside said matrix. Further provided is a method of manufacturing such sputtering targets. As so to not depend on nitriding reactions when sputtering, the target itself has the same composition as the barrier film. Reactions with semiconductor devices are effectively prevented. There are no particles created when sputtering. The sputtering target is particularly useful in creating barrier films and has excellent characteristics when forming barrier films.
Inventors:
SENDA SHINICHIRO (JP)
YAMAKOSHI YASUHIRO (JP)
ITO JUNICHI (JP)
YAMAKOSHI YASUHIRO (JP)
ITO JUNICHI (JP)
Application Number:
PCT/JP2010/056152
Publication Date:
October 21, 2010
Filing Date:
April 05, 2010
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
SENDA SHINICHIRO (JP)
YAMAKOSHI YASUHIRO (JP)
ITO JUNICHI (JP)
SENDA SHINICHIRO (JP)
YAMAKOSHI YASUHIRO (JP)
ITO JUNICHI (JP)
International Classes:
B22F3/14; C23C14/34; C22C27/04; C23C14/14; H01L21/28; H01L21/285
Foreign References:
| JP2000169923A | 2000-06-20 | |||
| JP2003031576A | 2003-01-31 | |||
| JP2000306863A | 2000-11-02 | |||
| JP2003049264A | 2003-02-21 | |||
| JPH11200025A | 1999-07-27 | |||
| JPS58144401A | 1983-08-27 | |||
| JPH02163337A | 1990-06-22 | |||
| JP2003064440A | 2003-03-05 |
Other References:
KALOYEROS A E; EISENBRAUN E: "Ultrathin diffusion barriers/liners for gigascale copper metallization", ANNU REV MATER SCI, vol. 30, 2000, pages 363 - 385
See also references of EP 2431494A4
See also references of EP 2431494A4
Attorney, Agent or Firm:
OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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