BARRIER LAYER STRUCTURE FOR COPPER METALLIZATION AND METHOD OF FORMING THE STRUCTURE

Title:

BARRIER LAYER STRUCTURE FOR COPPER METALLIZATION AND METHOD OF FORMING THE STRUCTURE

Document Type and Number:

WIPO Patent Application WO2002012589

Kind Code:

A3

Abstract:

A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.

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Inventors:

CHEN LING
MARCADAL CHRISTOPHE

Application Number:

PCT/US2001/024880

Publication Date:

July 11, 2002

Filing Date:

August 08, 2001

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Assignee:

APPLIED MATERIALS INC (US)

International Classes:

C23C16/34; C23C28/00; C23C28/02; H01L21/768; H01L21/285; (IPC1-7): H01L21/768; H01L23/532

Foreign References:

US5972179A

1999-10-26

Other References:

PATENT ABSTRACTS OF JAPAN vol. 1999, no. 07 31 March 1999 (1999-03-31)

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