Title:
BASE HAVING TRANSPARENT CONDUCTIVE OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2012/176817
Kind Code:
A1
Abstract:
In a base having a transparent conductive oxide film, wherein an overcoat film is provided on the transparent conductive oxide film, an ohmic contact is established at the interface between the transparent conductive oxide film and the overcoat film.
A base having a transparent conductive oxide film, wherein a transparent conductive oxide film is formed on a base and an overcoat film is formed on the transparent conductive oxide film respectively by an atmospheric pressure CVD method. The base having a transparent conductive oxide film is characterized in that: the transparent conductive oxide film is composed of a fluorine-doped SnO2 film, which contains fluorine at a molar ratio of 0.0001-0.09 relative to the tin oxide (SnO2), in at least a portion that is in contact with the overcoat film; the overcoat film is mainly composed of titanium oxide (TiO2) and contains tin oxide; and the Sn/(Sn + Ti) molar ratio in the overcoat film is 0.05 or more but less than 0.5.
Inventors:
HIGASHI SEIJI (JP)
Application Number:
PCT/JP2012/065775
Publication Date:
December 27, 2012
Filing Date:
June 20, 2012
Export Citation:
Assignee:
ASAHI GLASS CO LTD (JP)
HIGASHI SEIJI (JP)
HIGASHI SEIJI (JP)
International Classes:
H01L31/04; H01B5/14; H01L21/28; H01L21/285
Foreign References:
| JP2001060703A | 2001-03-06 | |||
| JP2006049107A | 2006-02-16 | |||
| JPH05343717A | 1993-12-24 | |||
| JP2008050677A | 2008-03-06 | |||
| JP2009505941A | 2009-02-12 |
Attorney, Agent or Firm:
SENMYO, Kenji et al. (JP)
Spring name Kenji (JP)
Spring name Kenji (JP)
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Claims: