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Patent Searching and Data


Title:
BASE MATERIAL SURFACE SELECTIVE MODIFICATION METHOD AND COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2018/043305
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a selective modification method for base material surfaces and a composition, whereby a surface region including silicon can be modified simply and highly selectively and densely. This selective modification method for base material surfaces comprises: a step in which a base material is prepared that has a first region including silicon, on a surface layer thereof; a step in which a composition is coated on the surface of the base material, said composition including a solvent and a first polymer that has, at the terminal of the main chain or a side chain thereof, a group including a first functional group that bonds with the silicon; and a step in which a coating film formed by the coating step is heated. The first region ideally includes a silicon oxide, a silicon nitride, or a silicon oxide nitride. Ideally, the base material also has a second region different from the first region and including metal, and the selective modification method also comprises a step, after the heating step, in which a section formed on the second region in the coating film is removed by using a rinse fluid.

Inventors:
KOMATSU Hiroyuki (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
ODA Tomohiro (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
OSAKI Hitoshi (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
HORI Masafumi (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
NARUOKA Takehiko (9-2 Higashi-Shinbashi 1-chome, Minato-k, Tokyo 40, 〒1058640, JP)
Application Number:
JP2017/030428
Publication Date:
March 08, 2018
Filing Date:
August 24, 2017
Export Citation:
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Assignee:
JSR CORPORATION (9-2 Higashi-Shinbashi 1-chome, Minato-ku Tokyo, 40, 〒1058640, JP)
International Classes:
H01L21/312; B05D3/02; B05D7/00; H01L21/3065
Domestic Patent References:
WO2010032796A12010-03-25
Foreign References:
JP2014078713A2014-05-01
JP2014063884A2014-04-10
JP2014236148A2014-12-15
JP2013524546A2013-06-17
JP2012033534A2012-02-16
US7521094B12009-04-21
JP2008036491A2008-02-21
JP2013525529A2013-06-20
JP2007145984A2007-06-14
JPH08337654A1996-12-24
Attorney, Agent or Firm:
AMANO Kazunori (6th Floor Fujikogyo-Nishimotomachi Building, 1-18, Aioi-cho 1-chome, Chuo-ku, Kobe-sh, Hyogo 25, 〒6500025, JP)
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