Title:
BASEBAND AND RF BIAS CIRCUIT, AND RF POWER AMPLIFIER CIRCUIT COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2022/195437
Kind Code:
A1
Abstract:
The present invention relates to a baseband and RF bias circuit (6) for an RF power amplifier, said bias circuit (6) having an input (7) configured to be connected to a DC power supply and an output (8) configured to be connected to a terminal, to be biased, of an RF power amplifier, characterized in that said bias circuit (6) comprises: a high-impedance inductive component (9) connected between the input (7) and the output (8) of the bias circuit (6); and a plurality of capacitors (10) connected in parallel between the input (7) of the bias circuit (6) and ground (GND), the plurality of capacitors (10) all having the same capacitance of between 1 nF and 1 µF.
Inventors:
BOUISSE GÉRARD (FR)
DELAGE QUENTIN (FR)
PLET SULLIVAN (FR)
GONZALEZ JULIEN (FR)
DELAGE QUENTIN (FR)
PLET SULLIVAN (FR)
GONZALEZ JULIEN (FR)
Application Number:
PCT/IB2022/052259
Publication Date:
September 22, 2022
Filing Date:
March 14, 2022
Export Citation:
Assignee:
WUPATEC (FR)
International Classes:
H03F3/195; H03F3/213; H03H7/01
Foreign References:
| US6639461B1 | 2003-10-28 | |||
| US5999058A | 1999-12-07 | |||
| CN107979347A | 2018-05-01 | |||
| US6639461B1 | 2003-10-28 | |||
| US5999058A | 1999-12-07 | |||
| CN107979347A | 2018-05-01 |
Attorney, Agent or Firm:
CABINET CHAILLOT (FR)
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