Title:
BEAM UNIFORMITY AND ANGULAR DISTRIBUTION MEASUREMENT SYSTEM
Document Type and Number:
WIPO Patent Application WO2004097881
Kind Code:
A3
Abstract:
The present invention facilitates semiconductor device fabrication by monitoring uniformity of beam current and angle of incidence at various locations throughout an ion beam (e.g., a wider portion of a ribbon beam). One or more uniformity detectors are employed within an ion implantation system (e.g., single wafer based system and/or a multiple wafer based system) and are comprised of a number of elements. The respective elements comprise an aperture that selectively obtains a beamlet from an incident ion beam and a pair of sensors that measure beam current as a function of the incoming angle of the ion beam. The angle of incidence at for particular elements can be determined at least partially from the measured beam current by the pairs of sensors. As a result, generation of an ion beam can be adjusted to improve uniformity as indicated and ion implantation can be performed with an improved uniformity and under tighter process controls.
Inventors:
BENVENISTE VICTOR (US)
Application Number:
PCT/US2004/013243
Publication Date:
February 03, 2005
Filing Date:
April 29, 2004
Export Citation:
Assignee:
AXCELIS TECH INC (US)
BENVENISTE VICTOR (US)
BENVENISTE VICTOR (US)
International Classes:
H01J3/00; H01J37/304; H01J37/317; H01L21/265; (IPC1-7): H01J37/304; H01J37/317
Foreign References:
| US20020121889A1 | 2002-09-05 | |||
| US6437350B1 | 2002-08-20 | |||
| EP0457321A2 | 1991-11-21 | |||
| EP0534737A1 | 1993-03-31 |
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