Title:
BIDIRECTIONAL TVS DEVICE HAVING SYMMETRICAL BREAKDOWN VOLTAGES
Document Type and Number:
WIPO Patent Application WO/2023/093249
Kind Code:
A1
Abstract:
A bidirectional TVS device having symmetrical breakdown voltages, relating to the field of ESD protection devices, and comprising an N-type substrate, an N-type buried layer, a P-type epitaxial layer, a deep trench, a P well, and N+ regions. The N-type buried layer is located on the N-type substrate, the P-type epitaxial layer is located on the N-type buried layer, the P well and the N+ regions are located in the P-type epitaxial layer, and the deep trench runs through the P-type epitaxial layer, the N-type buried layer, and the N-type substrate; there are two N+ regions, which are respectively located on two sides of the P well and are equal in distance from the P well; the N+ regions are led out to serve as a positive electrode of the bidirectional TVS device, and the N-type substrate serves as a negative electrode of the bidirectional TVS device. The forward and reverse breakdown voltages can be effectively regulated and controlled by adjusting the layout size, the thickness of the epitaxial layer, and the concentration of the P well, so that the forward and reverse breakdown voltages are consistent.
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Inventors:
WANG TAO (CN)
HUANG LONG (CN)
PENG SHIQIU (CN)
XIAO BUWEN (CN)
HE QI (CN)
ZHANG SHIQUAN (CN)
ZHANG JI (CN)
HUANG LONG (CN)
PENG SHIQIU (CN)
XIAO BUWEN (CN)
HE QI (CN)
ZHANG SHIQUAN (CN)
ZHANG JI (CN)
Application Number:
PCT/CN2022/120396
Publication Date:
June 01, 2023
Filing Date:
September 22, 2022
Export Citation:
Assignee:
WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD (CN)
International Classes:
H01L29/06; H01L29/861
Foreign References:
| CN114005870A | 2022-02-01 | |||
| CN216288469U | 2022-04-12 | |||
| JP2015070078A | 2015-04-13 | |||
| CN112838119A | 2021-05-25 | |||
| US20160148921A1 | 2016-05-26 |
Attorney, Agent or Firm:
BEIJING SHENCHUAN PATENT AGENCY (GENERAL PARTNERSHIP) (CN)
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