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Title:
BIOCHEMICAL SENSOR UNDER STANDARD CMOS TECHNOLOGY
Document Type and Number:
WIPO Patent Application WO/2017/206414
Kind Code:
A1
Abstract:
A biochemical sensor under a standard CMOS technology, comprising a pedestal, an ion-sensitive field effect transistor, a metal layer, a contact layer, and an electrode. The ion-sensitive field effect transistor is disposed on the pedestal and comprises a polysilicon channel formed on a CMOS polysilicon layer. Two ends of the polysilicon channel are respectively connected to a source and a drain, and then the source and the drain are connected to the metal layer by means of the contact layer. A polysilicon channel region of the polysilicon channel is exposed to be in contact with an electrolyte solution. The electrode is in contact with the electrolyte solution to provide a gate voltage to the polysilicon channel. The sensor has high sensitivity, improves sensor reproducibility and reduces device error and product cost by means of a CMOS technology. The sensor is widely applied to the Internet of things of environment, the Internet of things of agriculture, biological detection, etc.

Inventors:
XUE, Lirong (3th floor of Fenghuang Science Park section D, No.7 Fenghuang Avenue Zhangjiagan, Suzhou Jiangsu 4, 215614, CN)
SUN, Wei (3th floor of Fenghuang Science Park section D, No.7 Fenghuang Avenue Zhangjiagan, Suzhou Jiangsu 4, 215614, CN)
ZHU, Chunrong (3th floor of Fenghuang Science Park section D, No.7 Fenghuang Avenue Zhangjiagan, Suzhou Jiangsu 4, 215614, CN)
Application Number:
CN2016/102070
Publication Date:
December 07, 2017
Filing Date:
October 14, 2016
Export Citation:
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Assignee:
ZHANGJIAGANG ONECHIP BIOTECHNOLOGY CO., LTD. (3th floor of Fenghuang Science Park section D, No.7 Fenghuang Avenue Zhangjiagan, Suzhou Jiangsu 4, 215614, CN)
International Classes:
G01N27/414
Attorney, Agent or Firm:
NANJING ZONGHENG INTELLECTUAL PROPERTY AGENCY CO.,LTD. (3th floor of Innovation Square, No.9 Gaoxin Road High-tech Zone PukouNanjing, Jiangsu 2, 210032, CN)
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