Title:
BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/208295
Kind Code:
A1
Abstract:
An element section comprising a collector layer (105), a base layer (106), an emitter layer (107), an emitter cap layer (108), an emitter electrode (109), and a base electrode (110) is formed on a heat-dissipating substrate (101). Furthermore, a base heat-dissipating via (119) comprising a metal connecting base wiring (115) to a base heat-dissipating pad (104) is provided, in addition to an emitter heat-dissipating via (117) comprising a metal connecting emitter wiring (114) to an emitter heat-dissipating pad (103).
Inventors:
SHIRATORI YUTA (JP)
IDA MINORU (JP)
IDA MINORU (JP)
Application Number:
PCT/JP2019/016117
Publication Date:
October 31, 2019
Filing Date:
April 15, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L21/331; H01L29/737
Foreign References:
| US8860092B1 | 2014-10-14 | |||
| JPH11274381A | 1999-10-08 | |||
| JP2015211049A | 2015-11-24 | |||
| JP2008181990A | 2008-08-07 |
Other References:
LI, C. J. ET AL.: "Experimental method to thermally deembed pads from RTH measurements", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 53, no. 10, 25 September 2006 (2006-09-25) - October 2006 (2006-10-01), pages 2540 - 2544, XP055646097
NOSAEVA, K. ET AL.: "Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer", ELECTRONICS LETTERS, vol. 51, no. 13, 25 June 2015 (2015-06-25), pages 1010 - 1012, XP006052563, DOI: 10.1049/el.2015.1135
NOSAEVA, K. ET AL.: "Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer", ELECTRONICS LETTERS, vol. 51, no. 13, 25 June 2015 (2015-06-25), pages 1010 - 1012, XP006052563, DOI: 10.1049/el.2015.1135
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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