BISMUTH FERRITE-BASED DIELECTRIC THIN FILM FOR HIGH-DENSITY ENERGY STORAGE, PREPARATION METHOD THEREFOR AND USE THEREOF

Title:

BISMUTH FERRITE-BASED DIELECTRIC THIN FILM FOR HIGH-DENSITY ENERGY STORAGE, PREPARATION METHOD THEREFOR AND USE THEREOF

Document Type and Number:

WIPO Patent Application WO/2018/177019

Kind Code:

A1

Abstract:

Disclosed are a bismuth ferrite-based dielectric thin film for high-density energy storage, a preparation method therefor and the use thereof, the general formula for the chemical composition of the dielectric thin film being (1-x)BiFeO3-xSrTiO3, wherein x is a molar fraction, and 0 < x < 1.

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Inventors:

LIN YUANHUA (CN)
PAN HAO (CN)
NAN CEWEN (CN)
SHEN YANG (CN)

Application Number:

PCT/CN2018/074659

Publication Date:

October 04, 2018

Filing Date:

January 31, 2018

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Assignee:

UNIV TSINGHUA (CN)

International Classes:

C04B35/453; C04B35/47

Foreign References:

CN107056276A	2017-08-18
CN104387058A	2015-03-04
CN103343315A	2013-10-09
CN102086119A	2011-06-08

Other References:

HAO: "BiFe03 - SrTi03 thin film as a new lead-free relaxor-ferroelect- ric capacitor with ultrahigh energy storage performance", JOURNAL OF MATERIALS CHEMISTRY A, 28 February 2017 (2017-02-28), XP055611799, DOI: 10.1039/C7TA00665A

Attorney, Agent or Firm:

TSINGYIHUA INTELLECTUAL PROPERTY LLC (CN)

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