Title:
BONDED SEMICONDUCTOR DEVICES HAVING PROGRAMMABLE LOGIC DEVICE AND DYNAMIC RANDOM-ACCESS MEMORY AND METHODS FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2020/211308
Kind Code:
A1
Abstract:
Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure including a programmable logic device, an array of static random-access memory (SRAM) cells, and a first bonding layer including a plurality of first bonding contacts. The semiconductor device also includes a second semiconductor structure including an array of dynamic random-access memory (DRAM) cells and a second bonding layer including a plurality of second bonding contacts. The semiconductor device further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.
Inventors:
LIU JUN (CN)
CHENG WEIHUA (CN)
CHENG WEIHUA (CN)
Application Number:
PCT/CN2019/110977
Publication Date:
October 22, 2020
Filing Date:
October 14, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L21/50; H01L25/18
Foreign References:
| CN110249427A | 2019-09-17 | |||
| CN110291631A | 2019-09-27 | |||
| CN109155301A | 2019-01-04 | |||
| CN101465346A | 2009-06-24 | |||
| US20190043836A1 | 2019-02-07 |
Other References:
See also references of EP 3891797A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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