BONDED SUBSTRATE AND METHOD FOR MANUFACTURING SAME, AND SUPPORT SUBSTRATE FOR BONDING

Title:

BONDED SUBSTRATE AND METHOD FOR MANUFACTURING SAME, AND SUPPORT SUBSTRATE FOR BONDING

Document Type and Number:

WIPO Patent Application WO/2016/052597

Kind Code:

A1

Abstract:

　Provided is a method for manufacturing a bonded substrate provided with a single crystal semiconductor substrate on a sintered substrate, said bonded substrate having minimal warping after bonding, good thermal conductivity, minimal loss in a high frequency region, and being suitable for use in high frequency devices and the like. Specifically, the method for manufacturing the bonded substrate comprises at least a step in which a coating process is carried out on the entire surface of a sintered substrate to obtain a support substrate provided with at least one amorphous film layer, and a step in which the support substrate and a single crystal semiconductor substrate are bonded with the amorphous film therebetween. The concentrations of Al, Fe and Ca on the surface of the amorphous film on the support substrate bonded to the single crystal semiconductor substrate, according to ICP-MS, are less than 5.0 × 1011 atoms/cm2, and the surface roughness Rms is not more than 0.2 nm.

Inventors:

KONISHI SHIGERU (JP)
KAWAI MAKOTO (JP)

Application Number:

PCT/JP2015/077687

Publication Date:

April 07, 2016

Filing Date:

September 30, 2015

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SHINETSU CHEMICAL CO (JP)

International Classes:

H01L21/02; B23K20/00; B23K20/16; H01L21/265; H01L27/12

Domestic Patent References:

WO2013094665A1	2013-06-27
WO2009011152A1	2009-01-22

Foreign References:

JP2010278160A	2010-12-09
JP2001064080A	2001-03-13

Other References: