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Patent Searching and Data


Title:
BONDED WAFER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2007/138848
Kind Code:
A1
Abstract:
Provided is a bonded wafer manufacturing method employing an ion implanting delamination method. The bonded wafer manufacturing method includes at least a step of bonding a base wafer with a bond wafer having a micro bubble layer formed by ion implantation; a step of delaminating the wafers by having the micro bubble layer as a boundary; and a step of removing the periphery of a thin film formed on the base wafer by the delamination step. At least a thin film periphery removing step after the delamination step is performed by dry etching wherein an etching gas is supplied from a nozzle, and the dry etching is performed by adjusting the inner diameter of the gas jetting port of the nozzle and an interval between the gas jetting port of the nozzle and the surface of the thin film. Thus, the bonded wafer manufacturing method, wherein the thin film periphery can be easily removed, a removal width can be obtained with excellent repeatability, and deterioration of thin film quality can be effectively prevented, is provided.

Inventors:
SOETA YASUTSUGU (JP)
NOTO NOBUHIKO (JP)
Application Number:
PCT/JP2007/059864
Publication Date:
December 06, 2007
Filing Date:
May 14, 2007
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
SOETA YASUTSUGU (JP)
NOTO NOBUHIKO (JP)
International Classes:
H01L21/02; H01L21/3065; H01L21/762; H01L27/12
Domestic Patent References:
WO2004070809A12004-08-19
WO2001027999A12001-04-19
Foreign References:
JP2005340622A2005-12-08
JP2004319285A2004-11-11
JP2004235407A2004-08-19
JP2004128079A2004-04-22
JP2004134661A2004-04-30
JPH0964321A1997-03-07
JPH11102848A1999-04-13
JP2003298030A2003-10-17
Other References:
See also references of EP 2023375A4
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-4 Motoasakusa 2-chome, Taito-k, Tokyo 41, JP)
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