Title:
sp3 BONDING BORON NITRIDE THIN FILM HAVING SELF-FORMING SURFACE SHAPE BEING ADVANTAGEOUS IN EXHIBITING PROPERTY OF EMITTING ELECTRIC FIELD ELECTRONS, METHOD FOR PREPARATION THEREOF AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2005/022578
Kind Code:
A1
Abstract:
A method for preparing an sp3 bonding boron nitride film exhibits excellent electric field electron emission characteristics which comprises introducing a reaction gas containing a boron source and a nitrogen source into a reaction vessel, adjusting the temperature of a substrate to the range of room temperature to 1300°C, and irradiating the substrate with an ultraviolet light with or without the generation of a plasma, to thereby form a surface structure excellent in electric field electron emission characteristics on the substrate by a reaction from the vapor phase in a self-forming manner. The film prepared by the above method is a material which, in addition to the above characteristics, has high resistance to electric field strength, can emit electrons with a great current density, and is free from the deterioration thereof.
Inventors:
Komatsu, Shojiro c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Moriyoshi, Yusuke c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Shimizu, Yoshiki c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Okada, Katsuyuki c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Moriyoshi, Yusuke c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Shimizu, Yoshiki c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Okada, Katsuyuki c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Application Number:
PCT/JP2004/012775
Publication Date:
March 10, 2005
Filing Date:
August 27, 2004
Export Citation:
Assignee:
NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-shi, Ibaraki, 305-0047, JP)
Komatsu, Shojiro c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Moriyoshi, Yusuke c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Shimizu, Yoshiki c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Okada, Katsuyuki c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Komatsu, Shojiro c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Moriyoshi, Yusuke c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Shimizu, Yoshiki c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
Okada, Katsuyuki c/o National Institute For Materials Science (2-1 Sengen 1-chom, Tsukuba-shi Ibaraki, 305-0047, JP)
International Classes:
C01B21/064; C23C16/34; C23C16/38; C23C16/48; H01J1/304; H01J9/02; (IPC1-7): H01J1/304; H01J9/02; C23C16/38; C01B21/064
Attorney, Agent or Firm:
Moritake, Yoshiaki (Tokyo-Chizai Patent Office, Kita-yaesu Bldg. 3rd Floor 2-11, Nihonbashi 3-chom, Chuo-ku Tokyo, 103-0027, JP)
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