Title:
BONDING DEFECT REMOVAL METHOD FOR BONDED WAFER AND METHOD FOR MANUFACTURING BONDED WAFER
Document Type and Number:
WIPO Patent Application WO/2024/080013
Kind Code:
A1
Abstract:
The present invention is a bonding defect removal method for a bonded wafer that is bonded to a transparent substrate by curing a thermosetting bonding member, said bonded wafer having a light-emitting element structure that has an active layer comprising (AlyGa1-y)xIn1-xP(0.4 ≤ x ≤ 0.6, 0 ≤ y ≤ 0.5), and said transparent substrate transmitting light of a light-emitting wavelength, wherein the bonded wafer is introduced into a plasma atmosphere, and the defects of the thermosetting bonding member where curing is insufficient are removed by being selectively destroyed. Thus, there is provided a bonding defect removal method for a bonded wafer, said method making it possible to remove curing defects from a bonded wafer in which a transparent substrate and a light-emitting element structure that has an active layer of an AlGaInP type are bonded with a thermosetting bonding member interposed therebetween, without using techniques such as measuring or the like.
Inventors:
ISHIZAKI JUN-YA (JP)
AKIYAMA TOMOHIRO (JP)
AKIYAMA TOMOHIRO (JP)
Application Number:
PCT/JP2023/031223
Publication Date:
April 18, 2024
Filing Date:
August 29, 2023
Export Citation:
Assignee:
SHIN ETSU HANDOTAI CO LTD (JP)
International Classes:
H01L21/02; H01L21/304; H01L21/52; H01L33/00
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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