Title:
BONDING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/163722
Kind Code:
A1
Abstract:
[Problem] A bonding layer 3 is formed on a piezoelectric material substrate 1, and the bonding layer 3 is formed from one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide, and titanium oxide. By irradiating a neutralizing beam A onto a surface 4 of the bonding layer and a surface of a support substrate, the surface of the bonding layer and the surface of a support substrate are activated. A surface 5 of the bonding layer and the surface of the support substrate are bonded together directly.
Inventors:
TAI TOMOYOSHI (JP)
HORI YUJI (JP)
ASAI KEIICHIRO (JP)
YOSHINO TAKASHI (JP)
GOTO MASASHI (JP)
NAMERIKAWA MASAHIKO (JP)
HORI YUJI (JP)
ASAI KEIICHIRO (JP)
YOSHINO TAKASHI (JP)
GOTO MASASHI (JP)
NAMERIKAWA MASAHIKO (JP)
Application Number:
PCT/JP2017/006461
Publication Date:
September 28, 2017
Filing Date:
February 22, 2017
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H03H3/08; H01L41/313; H01L41/337; H01L41/39; H03H9/25
Domestic Patent References:
| WO2014192597A1 | 2014-12-04 | |||
| WO2014027538A1 | 2014-02-20 |
Foreign References:
| JP2015145054A | 2015-08-13 |
Attorney, Agent or Firm:
HOSODA Masutoshi et al. (JP)
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