Title:
BONDING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/163723
Kind Code:
A1
Abstract:
[Problem] To enable bonding at normal temperature and improve bonding strength when directly bonding a piezoelectric single-crystal substrate and a support substrate formed from a ceramic.
[Solution] On a support substrate formed from a ceramic, a bonding layer is formed from one or more materials selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. By irradiating a neutralizing beam onto the surface of the bonding layer, the surface 4 of the bonding layer 3A is activated. The surface 4 of the bonding layer and the piezoelectric single crystal substrate 6 are bonded together directly.
Inventors:
TAI TOMOYOSHI (JP)
HORI YUJI (JP)
ASAI KEIICHIRO (JP)
YOSHINO TAKASHI (JP)
GOTO MASASHI (JP)
NAMERIKAWA MASAHIKO (JP)
HORI YUJI (JP)
ASAI KEIICHIRO (JP)
YOSHINO TAKASHI (JP)
GOTO MASASHI (JP)
NAMERIKAWA MASAHIKO (JP)
Application Number:
PCT/JP2017/006463
Publication Date:
September 28, 2017
Filing Date:
February 22, 2017
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H03H3/08; H01L41/09; H01L41/187; H01L41/313; H01L41/337; H03H9/25
Domestic Patent References:
| WO2014192597A1 | 2014-12-04 |
Foreign References:
| JP2015145054A | 2015-08-13 |
Attorney, Agent or Firm:
HOSODA Masutoshi et al. (JP)
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