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Title:
BONDING STRUCTURE, BONDING MATERIAL AND BONDING METHOD
Document Type and Number:
WIPO Patent Application WO/2016/027593
Kind Code:
A1
Abstract:
This bonding structure (20) is a bonding structure for bonding a Cu wiring line (12) and an element electrode (14) with each other. The bonding structure (20) is arranged between the Cu wiring line (12) and the element electrode (14), and comprises a first intermetallic compound (IMC) layer (21) (a layer of an intermetallic compound of Cu and Sn) formed at the interface with the Cu wiring line (12), a second intermetallic compound (IMC) layer (22) (a layer of an intermetallic compound of Cu and Sn) formed at the interface with the element electrode (14), and an intermediate layer (25) that is present between the intermetallic compound layers. In the intermediate layer (25), a network-like IMC (24) (a network-like intermetallic compound of Cu and Sn) is present in Sn (23).

Inventors:
MAENO KAZUHIRO (JP)
Application Number:
PCT/JP2015/070119
Publication Date:
February 25, 2016
Filing Date:
July 14, 2015
Export Citation:
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Assignee:
TOYOTA JIDOSHOKKI KK (JP)
International Classes:
B23K1/19; B23K1/00; B23K1/20; B23K35/14; B23K35/26; B23K35/30; H01L21/52; H05K3/34; B23K101/40; B23K101/42
Foreign References:
JP2009290007A2009-12-10
JP2002301588A2002-10-15
JPH0360051A1991-03-15
JPH01140509A1989-06-01
US6630251B12003-10-07
Attorney, Agent or Firm:
ONDA, Makoto et al. (JP)
Makoto Onda (JP)
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