Title:
BONDING WIRE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/163297
Kind Code:
A1
Abstract:
Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, the concentration of Ni relative to the entire wire is 0.1-1.2% by weight, and the thickness of the Pd coating layer is 0.015-0.150 μm.
Inventors:
OYAMADA TETSUYA (JP)
UNO TOMOHIRO (JP)
DEAI HIROYUKI (JP)
UNO TOMOHIRO (JP)
DEAI HIROYUKI (JP)
Application Number:
PCT/JP2015/062040
Publication Date:
October 29, 2015
Filing Date:
April 21, 2015
Export Citation:
Assignee:
NIPPON STEEL & SUMIKIN MAT CO (JP)
NIPPON MICROMETAL CORP (JP)
NIPPON MICROMETAL CORP (JP)
International Classes:
H01L21/60; C22C9/00; C22C9/06
Foreign References:
| JP2012036490A | 2012-02-23 | |||
| JPS61163194A | 1986-07-23 |
Other References:
See also references of EP 3136427A4
Attorney, Agent or Firm:
YOSHIDA TADANORI (JP)
Yoshida Justice (JP)
Yoshida Justice (JP)
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