Title:
BONDING WIRE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/013796
Kind Code:
A1
Abstract:
Provided is a bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, wherein second bonding performance is further improved in a Pd-plated lead frame, and excellent ball bonding performance can be achieved even under high humidity and heat conditions. In the bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, the concentration of Cu on the outermost surface of the wire is set at 1–10 at%, and the core contains 0.1–3.0 mass%, in total, of Pd and/or Pt, thus improving second bonding performance and enabling excellent ball bonding performance to be achieved under high humidity and heat conditions. In addition, the maximum concentration of Au in the cover alloy layer is preferably 15–75 at%.
Inventors:
YAMADA TAKASHI (JP)
ODA DAIZO (JP)
OISHI RYO (JP)
UNO TOMOHIRO (JP)
ODA DAIZO (JP)
OISHI RYO (JP)
UNO TOMOHIRO (JP)
Application Number:
PCT/JP2015/071002
Publication Date:
January 26, 2017
Filing Date:
July 23, 2015
Export Citation:
Assignee:
NIPPON MICROMETAL CORP (JP)
NIPPON STEEL & SUMIKIN MAT CO (JP)
NIPPON STEEL & SUMIKIN MAT CO (JP)
International Classes:
H01L21/60
Foreign References:
| JP2013131654A | 2013-07-04 | |||
| JP2012036490A | 2012-02-23 | |||
| JP2011077254A | 2011-04-14 | |||
| JP2006190763A | 2006-07-20 | |||
| JPS6297360A | 1987-05-06 |
Other References:
See also references of EP 3136435A4
Attorney, Agent or Firm:
SAKAI, Hiroaki (JP)
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