Title:
BONDING WIRE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/193378
Kind Code:
A1
Abstract:
Provided is a bonding wire for a semiconductor device which has good bondability even if the bonding wire is used for wedge bonding at normal temperature, and which is excellent in bond reliability. The bonding wire has a core material comprising Cu or a Cu alloy (hereinafter referred to as "Cu core material"), and a coating containing a noble metal and provided over a surface of the Cu core material. The Cu concentration of a surface of the wire is 30-80 at%.
Inventors:
ETO MOTOKI (JP)
ODA DAIZO (JP)
UNO TOMOHIRO (JP)
OYAMADA TETSUYA (JP)
ODA DAIZO (JP)
UNO TOMOHIRO (JP)
OYAMADA TETSUYA (JP)
Application Number:
PCT/JP2021/011217
Publication Date:
September 30, 2021
Filing Date:
March 18, 2021
Export Citation:
Assignee:
NIPPON MICROMETAL CORP (JP)
NIPPON STEEL CHEMICAL & MAT CO LTD (JP)
NIPPON STEEL CHEMICAL & MAT CO LTD (JP)
International Classes:
C22C9/00; C22C9/04; C22C9/06; C25D7/00; C25D7/06; H01L21/60
Domestic Patent References:
WO2019130570A1 | 2019-07-04 |
Foreign References:
JP2019033275A | 2019-02-28 | |||
JP2011249463A | 2011-12-08 | |||
JP2007012776A | 2007-01-18 | |||
JP2010212697A | 2010-09-24 | |||
JP2016511529A | 2016-04-14 | |||
JP2005167020A | 2005-06-23 | |||
JP2002246542A | 2002-08-30 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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