BONDING WIRE FOR SEMICONDUCTOR DEVICES

Title:

BONDING WIRE FOR SEMICONDUCTOR DEVICES

Document Type and Number:

WIPO Patent Application WO/2016/135993

Kind Code:

A1

Abstract:

Provided is a Cu bonding wire having a Pd coating layer on the surface, which has improved bonding reliability at a ball joint in a high-temperature high-humidity environment, and which is suitable to devices for in-vehicle use. A bonding wire for semiconductor devices, which comprises a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, and wherein the bonding wire contains In in an amount of 0.011-1.2% by mass and the Pd coating layer has a thickness of 0.015-0.150 μm. Consequently, the bonding life in a ball joint in a high-temperature high-humidity environment is improved, and the bonding reliability is able to be improved. If the Cu alloy core material contains one or more elements selected from among Pt, Pd, Rh and Ni respectively in an amount of 0.05-1.2% by mass, the ball joint reliability in a high temperature environment at 175°C or more is able to be improved. In addition, if an Au superficial layer is additionally formed on the surface of the Pd coating layer, wedge bondability is improved.

Inventors:

ODA DAIZO (JP)
ETO MOTOKI (JP)
YAMADA TAKASHI (JP)
HAIBARA TERUO (JP)
OISHI RYO (JP)
UNO TOMOHIRO (JP)
OYAMADA TETSUYA (JP)

Application Number:

PCT/JP2015/066385

Publication Date:

September 01, 2016

Filing Date:

June 05, 2015

Export Citation:

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Assignee:

NIPPON MICROMETAL CORP (JP)
NIPPON STEEL & SUMIKIN MAT CO (JP)

International Classes:

H01L21/60; C22C9/00; C22F1/08

Domestic Patent References:

WO2009093554A1

2009-07-30

Foreign References:

JP2009158931A	2009-07-16
JPS6148543A	1986-03-10
JP2005167020A	2005-06-23
JP2012036490A	2012-02-23

Other References: