BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE

Title:

BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE

Document Type and Number:

WIPO Patent Application WO/2015/152191

Kind Code:

A1

Abstract:

A bonding wire for use with semiconductor devices that, in order to minimize leaning problems and spring problems, is characterized in that: (1) a cross-section that is parallel to the lengthwise direction of the wire and contains the center of the wire (a wire-center cross-section) contains no crystal grains (fibrous structures) that have a major axis (a)/minor axis (b) ratio (a/b) of 10 or more and an area of 15 µm2 or more; (2) 50% to 90% of the area of the wire-center cross-section exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire; and (3) 50% to 90% of the area of the surface of the wire exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire. During a wire-drawing step, wire drawing that results in an area reduction of at least 15.5% is performed at least once, and a final heat-treatment temperature and a final pre-heat-treatment temperature are set to within prescribed ranges.

Inventors:

YAMADA TAKASHI (JP)
ODA DAISO (JP)
OISHI RYO (JP)
HAIBARA TERUO (JP)
UNO TOMOHIRO (JP)

Application Number:

PCT/JP2015/060035

Publication Date:

October 08, 2015

Filing Date:

March 31, 2015

Export Citation:

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Assignee:

NIPPON MICROMETAL CORP (JP)
NIPPON STEEL & SUMIKIN MAT CO (JP)

International Classes:

H01L21/60; B21C1/00; C22C5/06; C22C5/08; C22F1/00; C22F1/14

Foreign References:

JP2014053610A	2014-03-20
JP2010167490A	2010-08-05

Other References: